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STGB5H60DF

絲?。?a target="_blank" title="Marking" href="/gb5h60df/marking.html">GB5H60DF；Package：D2PAK；Trench gate field-stop IGBT, H series 600 V, 5 A high speed

Description ThesedevicesareIGBTsdevelopedusingan advancedproprietarytrenchgateandfield-stop structure.ThedevicesarepartoftheHseriesof IGBTs,whichrepresentanoptimumcompromise betweenconductionandswitchinglossesto maximizetheefficiencyofhighswitching frequen

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STGB5H60DF

600 V、5 A高速溝槽柵場(chǎng)截止H系列IGBT; ? High-speed switching \n? Tight parameter distribution \n? Safe paralleling \n? Low thermal resistance \n? Short-circuit rated \n? Ultrafast soft recovery antiparallel diode;

These devices are IGBTs developed using an advanced proprietary trench gate field-stop structure. These devices are part of the H series of IGBTs, which represents an optimum compromise between conduction and switching losses to maximize the efficiency of high switching frequency converters. Furthermore, a slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation.\n\n

STSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STGD5H60DF

TrenchField-stopIGBT

DESCRIPTION ·Highruggedness,temperaturestablebehavior ·VerylowVCEsat ·Verytightparameterdistribution ·Tightparameterdistribution APPLICATIONS ·Inductioncooker ·Microwaveovens

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

STGD5H60DF

Trenchgatefield-stopIGBT,Hseries600V,5Ahighspeed

Description ThesedevicesareIGBTsdevelopedusingan advancedproprietarytrenchgateandfield-stop structure.ThedevicesarepartoftheHseriesof IGBTs,whichrepresentanoptimumcompromise betweenconductionandswitchinglossesto maximizetheefficiencyofhighswitching frequen

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STGF5H60DF

Trenchgatefield-stopIGBT,Hseries600V,5Ahighspeed

Description ThesedevicesareIGBTsdevelopedusingan advancedproprietarytrenchgateandfield-stop structure.ThedevicesarepartoftheHseriesof IGBTs,whichrepresentanoptimumcompromise betweenconductionandswitchinglossesto maximizetheefficiencyofhighswitching frequen

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STGP5H60DF

Trenchgatefield-stopIGBT,Hseries600V,5Ahighspeed

Description ThesedevicesareIGBTsdevelopedusingan advancedproprietarytrenchgateandfield-stop structure.ThedevicesarepartoftheHseriesof IGBTs,whichrepresentanoptimumcompromise betweenconductionandswitchinglossesto maximizetheefficiencyofhighswitching frequen

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

技術(shù)參數(shù)

  • Package：

    D2PAK

  • Grade：

    Industrial

  • VCES_max(V)：

    600

  • PTOT_max(W)：

    88

  • Freewheeling diode：

    true

  • IC_max(@ Tc=100°C)(A)：

    5

  • IC_max(@ Tc=25°C)(A)：

    10

  • IF_max(@ Tc=100°C)(A)：

    5

  • IF_max(@ Tc=25°C)(A)：

    10

  • VCE(sat)_typ(V)：

    1.5

  • VF_typ(V)：

    2.1

  • Qg_typ(nC)：

    43

  • Eon_typ(mJ)：

    0.06

  • Eoff_typ(mJ)：

    0.08

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
ST
23+
D2PAK
12500
ST系列在售,可接長(zhǎng)單
 詢價(jià)
STM
1809+
TO-263
3675
就找我吧!--邀您體驗(yàn)愉快問購(gòu)元件!
 詢價(jià)
22+
NA
1000
加我QQ或微信咨詢更多詳細(xì)信息,
 詢價(jià)
ST/意法半導(dǎo)體
24+
Si
6000
全新原裝深圳倉(cāng)庫(kù)現(xiàn)貨有單必成
 詢價(jià)
ST/意法半導(dǎo)體
21+
Si
8860
只做原裝,質(zhì)量保證
 詢價(jià)
ST
22+
D2PAK
9000
原廠渠道,現(xiàn)貨配單
 詢價(jià)
ST/意法半導(dǎo)體
2020+
Si
7600
只做原裝正品,賣元器件不賺錢交個(gè)朋友
 詢價(jià)
ST/意法半導(dǎo)體
23+
Si
8860
原裝正品，支持實(shí)單
 詢價(jià)
ST/意法半導(dǎo)體
22+
Si
6000
進(jìn)口原裝,優(yōu)勢(shì)現(xiàn)貨
 詢價(jià)
ST/意法半導(dǎo)體
21+
Si
10000
原裝公司現(xiàn)貨
 詢價(jià)
更多STGB5H60DF供應(yīng)商 更新時(shí)間2025-7-29 14:21:00

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