描述 Description

These devices are IGBTs developed using an

advanced proprietary trench gate and field-stop

structure. The devices are part of the H series of

IGBTs, which represent an optimum compromise

between conduction and switching losses to

maximize the efficiency of high switching

frequency converters. Moreover, a slightly

positive VCE(sat) temperature coefficient and very

tight parameter distribution result in safer

paralleling operation.

特性 Features

? High speed switching

? Tight parameters distribution

? Safe paralleling

? Low thermal resistance

? Short-circuit rated

? Ultrafast soft recovery antiparallel diode

Applications

? Motor control

? UPS, PFC