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STF6N65K3(045Y)

N-channel 650 V, 1.1 Ohm typ., 5.4 A SuperMESH3(TM) Power MOSFET in TO-220FP narrow leads package; ? 100% avalanche tested\n? Extremely high dv/dt capability\n? Gate charge minimized? Very low intrinsic capacitance\n? Improved diode reverse recovery characteristics\n? Zener-protected;

This SuperMESH3? Power MOSFET is the result of improvements applied to STMicroelectronics’ SuperMESH? technology, combined with a new optimized vertical structure. This device boasts an extremely low on-resistance, superior dynamic performance and high avalanche capability, rendering it suitable for the most demanding applications.\n \n

STF6N65K3

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=5.4A@TC=25℃ ·DrainSourceVoltage-VDSS=650V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=1.3Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

STF6N65K3

N-channel650V,1.1ohmtyp.,5.4ASuperMESH3PowerMOSFETinTO-220FP,IPAKFP,IPAK

STFI6N65K3

N-channel650V,1.1ohmtyp.,5.4ASuperMESH3PowerMOSFETinTO-220FP,IPAKFP,IPAK

STU6N65K3

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=5.4A@TC=25℃ ·DrainSourceVoltage-VDSS=650V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=1.3Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

STU6N65K3

N-channel650V,1.1ohmtyp.,5.4ASuperMESH3PowerMOSFETinTO-220FP,IPAKFP,IPAK