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STFI6N65K3

N-channel 650 V, 1.1 Ohm typ., 5.4 A SuperMESH3(TM) Power MOSFET in I2PAKFP package; 100% avalanche tested\nExtremely high dv/dt capability\nGate charge minimized\nVery low intrinsic capacitance\nImproved diode reverse recovery characteristics\nZener-protected\n;

These SuperMESH3? Power MOSFETs are the result of improvements applied to STMicroelectronics’ SuperMESH? technology, combined with a new optimized vertical structure. These devices boast an extremely low on-resistance, superior dynamic performance and high avalanche capability, rendering them suitable for the most demanding applications.\n

STFI6N65K3

絲印：6N65K3；Package：IPAKFP；N-channel 650 V, 1.1 ohm typ., 5.4 A SuperMESH3 Power MOSFET in TO-220FP, I PAKFP, IPAK

STF6N65K3

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=5.4A@TC=25℃ ·DrainSourceVoltage-VDSS=650V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=1.3Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

STF6N65K3

N-channel650V,1.1ohmtyp.,5.4ASuperMESH3PowerMOSFETinTO-220FP,IPAKFP,IPAK

STU6N65K3

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=5.4A@TC=25℃ ·DrainSourceVoltage-VDSS=650V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=1.3Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

STU6N65K3

N-channel650V,1.1ohmtyp.,5.4ASuperMESH3PowerMOSFETinTO-220FP,IPAKFP,IPAK