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STF26N60DM6

N溝道600 V、165 mOhm典型值、18 A MDmesh DM6功率MOSFET，TO-220FP封裝; ? Fast-recovery body diode \n? Lower RDS(on) per area vs previous generation \n? Low gate charge, input capacitance and resistance \n? 100% avalanche tested \n? Extremely high dv/dt ruggedness \n? Zener-protected;

This high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fast-recovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with one of the most effective switching behaviors available in the market for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters.\n\n

STF26N60DM6

絲印：26N60DM6；Package：TO-220FP；N-channel 600 V, 165 m廓 typ., 18 A, MDmesh DM6 Power MOSFET in a TO??20FP package

STL26N60DM6

N-channel600V,175m廓typ.,15A,MDmeshDM6PowerMOSFETinaPowerFLAT8x8HVpackage

STP26N60DM6

nullN-channel600V,165m廓typ.,18A,MDmeshDM6PowerMOSFETinaTO??20package