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STD3NK90ZT4

絲?。?a target="_blank" title="Marking" href="/d3nk90z/marking.html">D3NK90Z；Package：DPAK；N-channel 900 V, 4.1 廓 typ., 3 A Zener-protected SuperMESH??Power MOSFET in DPAK, TO-220 and TO-220FP packages

DESCRIPTION TheSuperMESH?seriesisobtainedthroughanextremeoptimizationofST’swellestablishedstrip-basedPowerMESH?layout.Inadditiontopushingon-resistancesignificantlydown,specialcareistakentoensureaverygooddv/dtcapabilityforthemostdemandingapplications.Suchser

STD3NK90ZT4

絲印：D3NK90Z；Package：DPAK；N-CHANNEL 900V - 4.1ohm - 3A TO-220/TO-220FP/DPAK/IPAK Zener-Protected SuperMESH??ower MOSFET

DESCRIPTION TheSuperMESH?seriesisobtainedthroughanextremeoptimizationofST’swellestablishedstrip-basedPowerMESH?layout.Inadditiontopushingon-resistancesignificantlydown,specialcareistakentoensureaverygooddv/dtcapabilityforthemostdemandingapplications.Suchser

STD3NK90ZT4

isc N-Channel MOSFET Transistor

DESCRIPTION ·DrainCurrent:ID=3A@TC=25℃ ·DrainSourceVoltage :VDSS=900V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=4.8Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ·motordrive,D

STD3NK90ZT4

絲?。?a target="_blank" title="Marking" href="/d3nk90z/marking.html">D3NK90Z；Package：DPAK；N-channel 900 V, 3.6 Ω typ., 3 A SuperMESH? Power MOSFETs in DPAK, TO-220 and TO-220FP packages

Description Thesehigh-voltagedevicesareZener-protectedN-channelPowerMOSFETs developedusingtheSuperMESH?technologybySTMicroelectronics,an optimizationofthewell-establishedPowerMESH?.Inadditiontoasignificant reductioninon-resistance,thesedevicesaredesignedtoensure

STD3NK90ZT4

N溝道900 V、4.1 Ohm典型值、3 A SuperMESH功率MOSFET，DPAK封裝; ? 100% avalanche tested \n? Gate charge minimized \n? Very low intrinsic capacitance \n? Zener-protected;

This high-voltage device is a Zener-protected N-channel Power MOSFET developed using the SuperMESH technology by STMicroelectronics, an optimization of the well-established PowerMESH. In addition to a significant reduction in on-resistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applications.\n\n

STD3NK90ZT4

場效應管(MOSFET);

Tokmas

STD3NK90ZT4_V01

N-channel 900 V, 3.6 Ω typ., 3 A SuperMESH? Power MOSFETs in DPAK, TO-220 and TO-220FP packages

Description Thesehigh-voltagedevicesareZener-protectedN-channelPowerMOSFETs developedusingtheSuperMESH?technologybySTMicroelectronics,an optimizationofthewell-establishedPowerMESH?.Inadditiontoasignificant reductioninon-resistance,thesedevicesaredesignedtoensure