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STB5N52K3

N-channel 525 V, 1.2 ohm, 4.4 A SuperMESH3 Power MOSFET

Description ThesedevicesaremadeusingtheSuperMESH3?PowerMOSFETtechnologythatisobtainedviaimprovementsappliedtoSTMicroelectronics’SuperMESH?technologycombinedwithanewoptimizedverticalstructure.Theresultingproducthasanextremelylowonresistance,superiordynamicperf

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STB5N52K3

N-channel 525 V, 1.2 ohm, 4.4 A SuperMESH3 Power MOSFET

Description ThesedevicesaremadeusingtheSuperMESH3?PowerMOSFETtechnologythatisobtainedviaimprovementsappliedtoSTMicroelectronics’SuperMESH?technologycombinedwithanewoptimizedverticalstructure.Theresultingproducthasanextremelylowonresistance,superiordynamicperf

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STB5N52K3

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=4.4A@TC=25℃ ·DrainSourceVoltage-VDSS=525V(Min) ·StaticDrain-SourceOn-Resistance； -RDS(on)=1.5Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

STB5N52K3

N-channel 525 V, 1.2 廓, 4.4 A SuperMESH3??Power MOSFET D?PAK, DPAK, TO-220FP, TO-220, IPAK

etc2List of Unclassifed Manufacturers

etc未分類制造商etc2未分類制造商

STD5N52K3

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=4.4A@TC=25℃ ·DrainSourceVoltage-VDSS=525V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=1.5Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

STD5N52K3

N-channel525V,1.2廓,4.4ASuperMESH3??PowerMOSFETD?PAK,DPAK,TO-220FP,TO-220,IPAK

etc2List of Unclassifed Manufacturers

etc未分類制造商etc2未分類制造商

STD5N52K3

N-channel525V,1.2ohm,4.4ASuperMESH3PowerMOSFET

Description ThesedevicesaremadeusingtheSuperMESH3?PowerMOSFETtechnologythatisobtainedviaimprovementsappliedtoSTMicroelectronics’SuperMESH?technologycombinedwithanewoptimizedverticalstructure.Theresultingproducthasanextremelylowonresistance,superiordynamicperf

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STD5N52K3

N-channel525V,1.2ohm,4.4ASuperMESH3PowerMOSFET

Description ThesedevicesaremadeusingtheSuperMESH3?PowerMOSFETtechnologythatisobtainedviaimprovementsappliedtoSTMicroelectronics’SuperMESH?technologycombinedwithanewoptimizedverticalstructure.Theresultingproducthasanextremelylowonresistance,superiordynamicperf

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STF5N52K3

N-channel525V,1.2ohm,4.4ASuperMESH3PowerMOSFET

Description ThesedevicesaremadeusingtheSuperMESH3?PowerMOSFETtechnologythatisobtainedviaimprovementsappliedtoSTMicroelectronics’SuperMESH?technologycombinedwithanewoptimizedverticalstructure.Theresultingproducthasanextremelylowonresistance,superiordynamicperf

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STF5N52K3

N-channel525V,1.2廓,4.4ASuperMESH3??PowerMOSFETD?PAK,DPAK,TO-220FP,TO-220,IPAK

etc2List of Unclassifed Manufacturers

etc未分類制造商etc2未分類制造商

詳細(xì)參數(shù)

  • 型號(hào)：

    STB5N52K3

  • 功能描述：

    MOSFET N-Ch 525V 1.2 Ohm 4.4A SuperMESH3

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導(dǎo)通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風(fēng)格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
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加我QQ或微信咨詢更多詳細(xì)信息,
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N
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十七年VIP會(huì)員,誠(chéng)信經(jīng)營(yíng)，一手貨源，原裝正品可零售！
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TO-263-3,D2Pak(2 引線 + 接片
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更多STB5N52K3供應(yīng)商 更新時(shí)間2025-7-27 10:20:00

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