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SSM3K333R

6A, 30V N-CHANNEL POWER MOSFET

DESCRIPTION TheUTCSSM3K333RisanN-channelpowerMOSFETusingUTC’sadvancedtechnologytoprovidecustomerswithaminimumon-stateresistanceandsuperiorswitchingperformance. TheUTCSSM3K333Risusuallyusedinpowermanagementswitchingapplications. FEATURES *RDS(ON)

SSM3K333R

Power Management Switch Applications High-Speed Switching Applications

○PowerManagementSwitchApplications ○High-SpeedSwitchingApplications ?4.5Vdrive ?LowON-resistance:RDS(ON)=42m?(max)(@VGS=4.5V) :RDS(ON)=28m?(max)(@VGS=10V)

SSM3K333R

絲印：KFK；Package：SOT-23F；MOSFETs Silicon N-Channel MOS (U-MOSVII-H)

Applications ?PowerManagementSwitches ?High-SpeedSwitching Features (1)4.5-Vdrive (2)Lowdrain-sourceon-resistance :RDS(ON)=42mΩ(max)(@VGS=4.5V) RDS(ON)=28mΩ(max)(@VGS=10V)

SSM3K333R

N-Channel 30-V (D-S) MOSFET

FEATURES ?Halogen-freeAccordingtoIEC61249-2-21Definition ?TrenchFET?PowerMOSFET ?100RgTested ?ComplianttoRoHSDirective2002/95/EC APPLICATIONS ?DC/DCConverter

SSM3K333R

6A, 30V?? N-CHANNEL POWER?MOSFET; · RDS(ON)<42m? @ VGS=4.5V \n·?RDS(ON)<28m? @ VGS=10V \n· High switching speed?? \n· Low gate charge (Typ.=3.4nC) \n· Low CRSS (Typ.=28pF);

The UTC SSM3K333R?is an N-channel power MOSFET using UTC’s advanced technology to provide customers with a minimum? on-state resistance and superior switching performance.?? The UTC SSM3K333R?is usually used in power management? switching applications.

SSM3K333R

Small Low ON resistance MOSFETs; Drain current ID 6 A \nPower Dissipation PD 1 W \nDrain-Source voltage VDSS 30 V \nGate-Source voltage VGSS +/-20 V \n;

Polarity：N-ch\nAEC-Q101：Conform(*)\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：泰國\n

SSM3K333R_V01

MOSFETs Silicon N-Channel MOS (U-MOSVII-H)

Applications ?PowerManagementSwitches ?High-SpeedSwitching Features (1)4.5-Vdrive (2)Lowdrain-sourceon-resistance :RDS(ON)=42mΩ(max)(@VGS=4.5V) RDS(ON)=28mΩ(max)(@VGS=10V)

SSM3K333RG-AE3-R

6A, 30V N-CHANNEL POWER MOSFET

DESCRIPTION TheUTCSSM3K333RisanN-channelpowerMOSFETusingUTC’sadvancedtechnologytoprovidecustomerswithaminimumon-stateresistanceandsuperiorswitchingperformance. TheUTCSSM3K333Risusuallyusedinpowermanagementswitchingapplications. FEATURES *RDS(ON)

SSM3K333RL-AE3-R

6A, 30V N-CHANNEL POWER MOSFET

DESCRIPTION TheUTCSSM3K333RisanN-channelpowerMOSFETusingUTC’sadvancedtechnologytoprovidecustomerswithaminimumon-stateresistanceandsuperiorswitchingperformance. TheUTCSSM3K333Risusuallyusedinpowermanagementswitchingapplications. FEATURES *RDS(ON)

SSM3K333R_14

TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type (U-MOS VII-H)