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SSM3J307T

Field-Effect Transistor Silicon P-Channel MOS Type (U-MOSV)

○PowerManagementSwitchApplications ○High-SpeedSwitchingApplications ?1.5Vdrive ?LowON-resistance:Ron=83mΩ(max)(@VGS=-1.5V) Ron=56mΩ(max)(@VGS=-1.8V) Ron=40mΩ(max)(@VGS=-2.5V)

SSM3J307T

Bipolar Small-Signal Transistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

SSM3J307T

P-Channel 30 V (D-S) MOSFET

FEATURES ?TrenchFET?PowerMOSFET ?100RgTested APPLICATIONS ?ForMobileComputing -LoadSwitch -NotebookAdaptorSwitch -DC/DCConverter

SSM3J307T

Small-signal MOSFET; Drain current ID -5 A \nDrain-Source voltage VDSS -20 V \nGate-Source voltage VGSS +/-8 V \n;

Polarity：P-ch\nGeneration：U-MOSⅤ\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：日本\n