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SSM3J304T

Field-Effect Transistor Silicon P-Channel MOS Type Power Management Switch Applications High-Speed Switching Applications

○PowerManagementSwitchApplications ○High-SpeedSwitchingApplications ?1.8-Vdrive ?LowON-resistance:RDS(ON)=297m?(max)(@VGS=-1.8V) RDS(ON)=168m?(max)(@VGS=-2.5V) RDS(ON)=127m?(max)(@VGS=-4.0

SSM3J304T

P-Channel 20-V (D-S) MOSFET

FEATURES ?Halogen-freeAccordingtoIEC61249-2-21 Definition ?TrenchFET?PowerMOSFET ?100RgTested ?ComplianttoRoHSDirective2002/95/EC APPLICATIONS ?LoadSwitch ?PASwitch ?DC/DCConverters

SSM3J304T

Small-signal MOSFET; Drain current ID -2.3 A \nDrain-Source voltage VDSS -20 V \nGate-Source voltage VGSS +/-8 V \n;

Polarity：P-ch\nGeneration：U-MOSⅢ\nRoHS Compatible Product(s) (#)：Available\n

SSM3J304T_10

Power Management Switch Applications High-Speed Switching Applications