特性 Features

? Revolutionary semiconductor material - Silicon Carbide

? Benchmark switching behavior

? No reverse recovery/ No forward recovery

? Temperature independent switching behavior

? High surge current capability

? Pb-free lead plating; RoHS compliant

? Junction Temperature range from -40°C to 175°C

? System efficiency improvement over Si diodes

? System cost / size savings due to reduced cooling requirements

? Enabling higher frequency / increased power density solutions

? Higher system reliability due to lower operating temperatures

? Reduced EMI

Potential Applications

? Traction inverter

? Booster / DCDC Converter

? On board Charger / PFC

描述 Description

The 5th Generation CoolSiC? Automotive Schottky Diode represents Infineon leading edge technology for

Silicon Carbide Schottky Barrier diodes. Thanks to a compact design and a technology based on thin wafers,

this family of products shows improved efficiency over all load conditions resulting from both its thermal

characteristics and low figure of merit (Qc x Vf). This product family has been designed to complement

Infineon’s IGBT and CoolMOS? portfolio. This ensures meeting the most stringent application requirements in

the 650V voltage class.