訂購數(shù)量 | 價格 |
---|---|
1+ |
首頁>SI8425DB-T1-E1>芯片詳情
SI8425DB-T1-E1_VISHAY/威世科技_MOSFET -20V 23mOhm@4.5V 9.3A P-Ch G-III中聯(lián)芯電子
- 詳細信息
- 規(guī)格書下載
產(chǎn)品屬性
- 類型
描述
- 型號:
SI8425DB-T1-E1
- 功能描述:
MOSFET -20V 23mOhm@4.5V 9.3A P-Ch G-III
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶體管極性:
N-Channel
- 汲極/源極擊穿電壓:
650 V
- 閘/源擊穿電壓:
25 V
- 漏極連續(xù)電流:
130 A 電阻汲極/源極
- RDS(導通):
0.014 Ohms
- 配置:
Single
- 安裝風格:
Through Hole
- 封裝/箱體:
Max247
- 封裝:
Tube
供應商
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