訂購數(shù)量 | 價格 |
---|---|
1+ |
首頁>Si7900AEDN-T1-E3>芯片詳情
Si7900AEDN-T1-E3_SII/精工愛普生_MOSFET 20V 8.5A 1.5W中天科工二部
- 詳細信息
- 規(guī)格書下載
產(chǎn)品屬性
- 類型
描述
- 型號:
Si7900AEDN-T1-E3
- 功能描述:
MOSFET 20V 8.5A 1.5W
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶體管極性:
N-Channel
- 汲極/源極擊穿電壓:
650 V
- 閘/源擊穿電壓:
25 V
- 漏極連續(xù)電流:
130 A 電阻汲極/源極
- RDS(導(dǎo)通):
0.014 Ohms
- 配置:
Single
- 安裝風格:
Through Hole
- 封裝/箱體:
Max247
- 封裝:
Tube
供應(yīng)商
相近型號
- SI7898
- SI7905DN-T1-GE3
- SI7892BDP-T1-E3
- SI7911DN-T1-E3
- SI7888DP-T1-GE3
- SI7913DN
- SI7888DP-T1-E3
- SI7913DN-T1-GE3
- SI7888DP
- SI7922DN
- SI7886DP-T1-GE3
- SI7922DN-T1-GE3
- SI7886ADP-T1-E3
- SI7923DN
- SI7884DP-T1-GE3
- SI7923DN-T1-E3
- SI7884DP
- SI7923DN-T1-GE3
- SI7884BDP-T1-E3
- SI7925DN-T1-GE3
- SI7884BDP
- SI7938DP
- SI7880ADP-T1-E3
- SI7938DP-T1-E3
- SI7872DP-T1-GE3
- SI7938DP-T1-GE3
- SI7872
- SI7940
- SI786LG-T1
- SI7941
- SI7868DP-T1-GE3
- SI7942
- SI7868ADP-T1-E3
- SI7942DP
- SI7866ADP-T1-E3
- SI7942DP-T1-E3
- SI7862DP-T1-GE3
- SI7942DP-T1-GE3
- SI7862
- SI7943DP-T1
- SI7860DP-T1-GE3
- SI7949DP
- SI7860DP-T1-E3
- SI7949DP-T1-E3
- SI7860ADP-T1-GE3
- SI7949DP-T1-GE3
- SI7860ADP-T1-E3
- SI7956DP
- SI7858BDP-T1-GE3
- SI7956DP-T1-E3