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SI4410BDY

N-Channel30-V(D-S)MOSFET

FEATURES ?TrenchFETPowerMOSFET ?100RgTested APPLICATIONS ?BatterySwitch ?LoadSwitch

SI4410DY

SingleN-ChannelLogicLevelPowerTrenchMOSFET

GeneralDescription ThisN-ChannelLogicLevelMOSFETisproducedusingFairchildSemiconductor’sadvancedPowerTrenchprocessthathasbeenespeciallytailoredtominimizeon-stateresistanceandyetmaintainsuperiorswitchingperformance. Thisdeviceiswellsuitedforlowvoltageandbattery

SI4410DY

N-channelenhancementmodefield-effecttransistor

Description N-channelenhancementmodefield-effecttransistorinaplasticpackageusingTrenchMOS?1technology. Productavailability: Si4410DYinSOT96-1(SO8). Features ■Lowon-stateresistance ■Fastswitching ■TrenchMOS?technology. Applications ■DCtoDCconvertor

SI4410DY

N-Channel30-V(D-S)MOSFET

FEATURES ??
TrenchFETPowerMOSFET

SI4410DY

HEXFETPowerMOSFET

Description ThisN-channelHEXFET?PowerMOSFETisproducedusingInternationalRectifiersadvancedHEXFETpowerMOSFETtechnology.Thelowon-resistanceandlowgatechargeinherenttothistechnologymakethisdeviceidealforlowvoltageorbatterydrivenpowerconversionapplications TheSO-

SI4410DY

N-ChannelMOSFET

■Features ●VDS(V)=30V ●ID=10A(VGS=10V) ●RDS(ON)

SI4410DY

N-channelTrenchMOSlogiclevelFET

1.1Generaldescription LogiclevelN-channelenhancementmodeField-EffectTransistor(FET)inaplastic packageusingTrenchMOStechnology.Thisproductisdesignedandqualifiedforusein computing,communications,consumerandindustrialapplicationsonly. 1.2Featuresandbenefits Low

SI4410DY-HF

N-ChannelMOSFET

■Features ●VDS(V)=30V ●ID=10A(VGS=10V) ●RDS(ON)

SI4410DYPBF

N-ChannelMOSFET

Description ThisN-channelHEXFET?PowerMOSFETisproducedusingInternationalRectifiersadvancedHEXFETpowerMOSFETtechnology.Thelowonresistanceandlowgatechargeinherenttothistechnologymakethisdeviceidealforlowvoltageorbatterydrivenpowerconversionapplications. TheSO-

SI4410DYPBF

HEXFET?PowerMOSFET

Description ThisN-channelHEXFET?PowerMOSFETisproducedusingInternationalRectifiersadvancedHEXFETpowerMOSFETtechnology.Thelowonresistanceandlowgatechargeinherenttothistechnologymakethisdeviceidealforlowvoltageorbatterydrivenpowerconversionapplications. TheSO-