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SCT027W65G3-4AG中文資料意法半導(dǎo)體數(shù)據(jù)手冊PDF規(guī)格書
| 廠商型號 |
SCT027W65G3-4AG |
| 功能描述 | Automotive-grade silicon carbide Power MOSFET 650 V, 29 m? typ., 60 A in an HiP247-4 package |
| 文件大小 |
197.44 Kbytes |
| 頁面數(shù)量 |
12 頁 |
| 生產(chǎn)廠商 | STMICROELECTRONICS |
| 中文名稱 | 意法半導(dǎo)體 |
| 網(wǎng)址 | |
| 數(shù)據(jù)手冊 | |
| 更新時(shí)間 | 2025-8-8 17:10:00 |
| 人工找貨 | SCT027W65G3-4AG價(jià)格和庫存，歡迎聯(lián)系客服免費(fèi)人工找貨 |
SCT027W65G3-4AG規(guī)格書詳情
特性 Features
? AEC-Q101 qualified
? Very low RDS(on) over the entire temperature range
? High speed switching performances
? Very fast and robust intrinsic body diode
? Very high operating junction temperature capability (TJ = 200 °C)
? Source sensing pin for increased efficiency
Applications
? Main inverter (electric traction)
? DC/DC converter for EV/HEV
? On board charger (OBC)
描述 Description
This silicon carbide Power MOSFET device has been developed using ST’s
advanced and innovative 3rd generation SiC MOSFET technology. The device
features a very low RDS(on) over the entire temperature range combined with low
capacitances and very high switching operations, which improve application
performance in frequency, energy efficiency, system size and weight reduction.
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
ST |
2404+ |
TO-247 |
30 |
只做原裝正品假一賠十為客戶做到零風(fēng)險(xiǎn)!! |
詢價(jià) | ||
ST/意法半導(dǎo)體 |
25+ |
原廠封裝 |
10280 |
原廠授權(quán)代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源！ |
詢價(jià) | ||
AIM |
24+ |
8215 |
現(xiàn)貨供應(yīng),當(dāng)天可交貨!免費(fèi)送樣,原廠技術(shù)支持!!! |
詢價(jià) | |||
ST/意法半導(dǎo)體 |
25+ |
原廠封裝 |
9999 |
詢價(jià) | |||
ST |
22+ |
N/A |
17000 |
只做原裝正品 |
詢價(jià) | ||
ST/意法半導(dǎo)體 |
25+ |
原廠封裝 |
10280 |
詢價(jià) | |||
STMicroelectronics |
23+ |
SMD |
3652 |
原廠正品現(xiàn)貨供應(yīng)SIC全系列 |
詢價(jià) | ||
ST/意法半導(dǎo)體 |
25+ |
原廠封裝 |
11000 |
詢價(jià) | |||
ST(意法) |
23+ |
10000 |
只做全新原裝,實(shí)單來 |
詢價(jià) | |||
ST |
22+ |
BGA |
1000 |
原裝正品碳化硅 |
詢價(jià) |
