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SCT018H65G3AG中文資料意法半導(dǎo)體數(shù)據(jù)手冊PDF規(guī)格書
| 廠商型號 |
SCT018H65G3AG |
| 功能描述 | Automotive-grade silicon carbide Power MOSFET 650 V, 20 mΩ typ., 55 A in an H2PAK-7 package |
| 絲印標(biāo)識 | |
| 封裝外殼 | H2PAK-7 |
| 文件大小 |
390.98 Kbytes |
| 頁面數(shù)量 |
14 頁 |
| 生產(chǎn)廠商 | STMICROELECTRONICS |
| 中文名稱 | 意法半導(dǎo)體 |
| 網(wǎng)址 | |
| 數(shù)據(jù)手冊 | |
| 更新時間 | 2025-8-7 18:14:00 |
| 人工找貨 | SCT018H65G3AG價格和庫存，歡迎聯(lián)系客服免費(fèi)人工找貨 |
SCT018H65G3AG規(guī)格書詳情
特性 Features
? AEC-Q101 qualified
? Very low RDS(on) over the entire temperature range
? High speed switching performances
? Very fast and robust intrinsic body diode
? Source sensing pin for increased efficiency
Applications
? Main inverter (electric traction)
? DC/DC converter for EV/HEV
? On board charger (OBC)
描述 Description
This silicon carbide Power MOSFET device has been developed using ST’s
advanced and innovative 3rd generation SiC MOSFET technology. The device
features a very low RDS(on) over the entire temperature range combined with
low capacitances and very high switching operations, which improve application
performance in frequency, energy efficiency, system size and weight reduction.
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
STM |
兩年內(nèi) |
NA |
520 |
實單價格可談 |
詢價 | ||
STMicro |
22+ |
NA |
4000 |
原裝正品支持實單 |
詢價 | ||
ST/意法半導(dǎo)體 |
25+ |
原廠封裝 |
10280 |
原廠授權(quán)代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源！ |
詢價 | ||
24+ |
789 |
詢價 | |||||
ST |
22+ |
N/A |
8000 |
只做原裝正品 |
詢價 | ||
ST/意法半導(dǎo)體 |
25+ |
原廠封裝 |
10280 |
詢價 | |||
ST/意法半導(dǎo)體 |
25+ |
原廠封裝 |
9999 |
詢價 | |||
ST |
22+ |
BGA |
1000 |
原裝正品碳化硅 |
詢價 | ||
ST |
25+ |
30000 |
原裝現(xiàn)貨,可追溯原廠渠道 |
詢價 | |||
ST |
47920 |
只做正品 |
詢價 |
