| 零件編號(hào) | 下載 訂購 | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
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Marking：S306PZ；Package：SC-73；100 V, 4.1 A PNP low VCEsat (BISS) transistor Featuresandbenefits ?Lowcollector-emittersaturation voltageVCEsat ?Highcollectorcurrentcapability ICandICM ?Highcollectorcurrentgain(hFE)at highIC ?Highefficiencyduetolessheat generation ?SmallerPrinted-CircuitBoard(PCB) areathanforconventionaltransistors | NEXPERIANexperia B.V. All rights reserved 安世安世半導(dǎo)體(中國)有限公司 | NEXPERIA | ||
Marking：S306PZ；Package：SC-73；100 V, 4.1 A PNP low VCEsat transistor 1.Generaldescription PNPlowVCEsattransistorinaSOT223(SC-73)smallSurface-MountedDevice(SMD)plastic package. NPNcomplement:PBSS306NZ-Q 2.Featuresandbenefits ?Lowcollector-emittersaturationvoltageVCEsat ?HighcollectorcurrentcapabilityICandICM ?Highcollectorc | NEXPERIANexperia B.V. All rights reserved 安世安世半導(dǎo)體(中國)有限公司 | NEXPERIA |
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