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S305PZ

型號(hào)：PBSS305PZ-Q；Package：SOT223；80 V, 4.5 A PNP low VCEsat transistor

1.Generaldescription PNPlowVCEsattransistorinaSOT223(SC-73)smallSurface-MountedDevice(SMD)plastic package. NPNcomplement:PBSS305NZ-Q 2.Featuresandbenefits ?Lowcollector-emittersaturationvoltageVCEsat ?HighcollectorcurrentcapabilityICandICM ?Highcollectorc

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國(guó))有限公司

S306NZ

型號(hào)：PBSS306NZ；Package：SC-73；100 V, 5.1 A NPN low VCEsat (BISS) transistor

Features *Lowcollector-emittersaturationvoltageVCEsat *HighcollectorcurrentcapabilityICandICM *Highcollectorcurrentgain(hFE)athighIC *Highefficiencyduetolessheatgeneration *SmallerrequiredPrinted-CircuitBoard(PCB)areathanforconventionaltransistors

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國(guó))有限公司

S306NZ

型號(hào)：PBSS306NZ-Q；Package：SOT223；100 V, 5.1 A NPN low VCEsat transistor

1.Generaldescription NPNlowVCEsattransistorinaSOT223(SC-73)smallSurface-MountedDevice(SMD)plastic package. PNPcomplement:PBSS306PZ-Q 2.Featuresandbenefits ?Lowcollector-emittersaturationvoltageVCEsat ?HighcollectorcurrentcapabilityICandICM ?Highcollectorc

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國(guó))有限公司

S306PZ

型號(hào)：PBSS306PZ；Package：SC-73；100 V, 4.1 A PNP low VCEsat (BISS) transistor

Featuresandbenefits ?Lowcollector-emittersaturation voltageVCEsat ?Highcollectorcurrentcapability ICandICM ?Highcollectorcurrentgain(hFE)at highIC ?Highefficiencyduetolessheat generation ?SmallerPrinted-CircuitBoard(PCB) areathanforconventionaltransistors

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國(guó))有限公司

S306PZ

型號(hào)：PBSS306PZ-Q；Package：SC-73；100 V, 4.1 A PNP low VCEsat transistor

1.Generaldescription PNPlowVCEsattransistorinaSOT223(SC-73)smallSurface-MountedDevice(SMD)plastic package. NPNcomplement:PBSS306NZ-Q 2.Featuresandbenefits ?Lowcollector-emittersaturationvoltageVCEsat ?HighcollectorcurrentcapabilityICandICM ?Highcollectorc

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國(guó))有限公司

S30H120H

型號(hào)：TRS30H120H；Package：TO-247-2L；SiC Schottky Barrier Diode

Applications ?PowerFactorCorrection ?SolarInverters ?UninterruptiblePowerSupplies ?DC-DCConverters Features (1)Chipdesignof3rdgeneration (2)Lowforwardvoltage:VF=1.27V(typ.) (3)Lowtotalcapacitivecharge:Qc=162nC(typ.) (4)Lowreversecurrent:IR=2.8μA(ty

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

S30N120HB

型號(hào)：TRS30N120HB；Package：TO-247；SiC Schottky Barrier Diode

Applications ?PowerFactorCorrection ?SolarInverters ?UninterruptiblePowerSupplies ?DC-DCConverters Features (1)Chipdesignof3rdgeneration (2)Lowforwardvoltage:VF(PerLeg)=1.27V(typ.) (3)Lowtotalcapacitivecharge:Qc(PerLeg)=80nC(typ.) (4)Lowreversecurre

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

S3035EJ

型號(hào)：BTS3035EJ；Package：PG-TDSO8-31；Smart Low-Side Power Switch

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

S3080EJ

型號(hào)：BTS3080EJ；Package：PG-TDSO8-31；Smart Low-Side Power Switch

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

S3011TE

型號(hào)：HITFET-BTS3011TE；Package：PG-TO252-5；Smart Low-Side Power Switch

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
ST(意法半導(dǎo)體)
24+
DFN-8(1
3022
特價(jià)優(yōu)勢(shì)庫(kù)存質(zhì)量保證穩(wěn)定供貨
 詢價(jià)
ST(意法半導(dǎo)體)
24+
DFN-8(1
7178
百分百原裝正品,可原型號(hào)開(kāi)票
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ST/意法半導(dǎo)體
23+
DFN-8
6900
全新原裝正品現(xiàn)貨,支持訂貨
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ST/意法半導(dǎo)體
2021+
DFN-8
6900
原廠原裝,假一罰十
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ST/意法半導(dǎo)體
24+
DFN-8
30000
原裝正品公司現(xiàn)貨,假一賠十!
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ST/意法半導(dǎo)體
24+
DFN-8
6000
全新原裝深圳倉(cāng)庫(kù)現(xiàn)貨有單必成
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ST/意法半導(dǎo)體
2022+
DFN-8
6900
原廠原裝,假一罰十
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ST/意法半導(dǎo)體
21+
DFN-8
8080
只做原裝,質(zhì)量保證
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ST/意法半導(dǎo)體
25+
DFN-8
8880
原裝認(rèn)準(zhǔn)芯澤盛世！
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ST/意法半導(dǎo)體
23+
DFN-8
8080
原裝正品，支持實(shí)單
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更多S30供應(yīng)商 更新時(shí)間2025-7-29 10:22:00

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