首頁 >RTD2719-VM-CG>規(guī)格書列表
| 零件編號(hào) | 下載 訂購 | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
TOSHIBACCDLinearImageSensorCCD TheTCD2719DGisahighsensitiveandlowdarkcurrent7300 elements?3linesoutputCCDcolorlinearimagesensor. Thedevicecontainsarowof7300elements?3linesphotodiodes whichprovide24lines/mmacrossaA3sizepaper.Thedeviceis operatedby5.0Vpulseand10Vpowersupply. | TOSHIBAToshiba Semiconductor 東芝株式會(huì)社東芝 | TOSHIBA | ||
PhotocouplersInfraredLED&PhotoIC Applications ?IntelligentPowerModuleSignalIsolation ?FactoryAutomation(FA) ?IndustrialInverters General TheTLP2719consistsofahigh-outputinfraredLEDcoupledwithahigh-gain,high-speedphotodetector.Itis housedintheSO6Lpackage. Thisproductcanbemountedonthesa | TOSHIBAToshiba Semiconductor 東芝株式會(huì)社東芝 | TOSHIBA | ||
CrystalUnitSMD2.5x2.026.0MHz Features: SurfaceMountHermeticPackage ExcellentReliabilityPerformance GoodFrequencyPerturbationandStabilityovertemperature UltraMiniaturePackage DescriptionandApplications: Surfacemount2.5mmx2.0mmcrystalunitforuseinwirelesscommunicationsdevices, especiallyforan | TAI-SAW TAI-SAW TECHNOLOGY CO., LTD. | TAI-SAW | ||
CrystalUnitSMD2.5x2.026.00MHz Features: SurfaceMountHermeticPackage ExcellentReliabilityPerformance GoodFrequencyPerturbationandStabilityovertemperature UltraMiniaturePackage MoistureSensitivityLevel(MSL):Level-1 DescriptionandApplications: Surfacemount2.5mmx2.0mmcrystalunitforuseinwireless | TAI-SAW TAI-SAW TECHNOLOGY CO., LTD. | TAI-SAW | ||
MOSFIELDEFFECTTRANSISTOR DESCRIPTION TheμPA2719AGRisP-ChannelMOSFieldEffect Transistordesignedforpowermanagementapplicationsof notebookcomputersandLithium-Ionbatteryprotection circuit. FEATURES ?Lowon-stateresistance RDS(on)1=13mΩMAX.(VGS=?10V,ID=?5.0A) RDS(on)2=20.9mΩMAX.(VGS | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
MOSFIELDEFFECTTRANSISTOR DESCRIPTION TheμPA2719GRisP-ChannelMOSFieldEffectTransistor designedforpowermanagementapplicationsofnotebook computersandLi-ionbatteryprotectioncircuit. FEATURES ?Lowon-stateresistance RDS(on)1=13mΩMAX.(VGS=?10V,ID=?5.0A) RDS(on)2=20.9mΩMAX.(VGS=?4.5 | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
SWITCHINGP-CHANNELPOWERMOSFET | NECRenesas Electronics America 瑞薩日本瑞薩電子株式會(huì)社 | NEC |
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