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TCD2719DG

TOSHIBA CCD Linear Image Sensor CCD

TheTCD2719DGisahighsensitiveandlowdarkcurrent7300 elements?3linesoutputCCDcolorlinearimagesensor. Thedevicecontainsarowof7300elements?3linesphotodiodes whichprovide24lines/mmacrossaA3sizepaper.Thedeviceis operatedby5.0Vpulseand10Vpowersupply.

TLP2719

PhotocouplersInfraredLED&PhotoIC

Applications ?IntelligentPowerModuleSignalIsolation ?FactoryAutomation(FA) ?IndustrialInverters General TheTLP2719consistsofahigh-outputinfraredLEDcoupledwithahigh-gain,high-speedphotodetector.Itis housedintheSO6Lpackage. Thisproductcanbemountedonthesa

TZ2719A

CrystalUnitSMD2.5x2.026.0MHz

Features: SurfaceMountHermeticPackage ExcellentReliabilityPerformance GoodFrequencyPerturbationandStabilityovertemperature UltraMiniaturePackage DescriptionandApplications: Surfacemount2.5mmx2.0mmcrystalunitforuseinwirelesscommunicationsdevices, especiallyforan

TZ2719B

CrystalUnitSMD2.5x2.026.00MHz

Features: SurfaceMountHermeticPackage ExcellentReliabilityPerformance GoodFrequencyPerturbationandStabilityovertemperature UltraMiniaturePackage MoistureSensitivityLevel(MSL):Level-1 DescriptionandApplications: Surfacemount2.5mmx2.0mmcrystalunitforuseinwireless

UPA2719AGR

MOSFIELDEFFECTTRANSISTOR

DESCRIPTION TheμPA2719AGRisP-ChannelMOSFieldEffect Transistordesignedforpowermanagementapplicationsof notebookcomputersandLithium-Ionbatteryprotection circuit. FEATURES ?Lowon-stateresistance RDS(on)1=13mΩMAX.(VGS=?10V,ID=?5.0A) RDS(on)2=20.9mΩMAX.(VGS

UPA2719GR

MOSFIELDEFFECTTRANSISTOR

DESCRIPTION TheμPA2719GRisP-ChannelMOSFieldEffectTransistor designedforpowermanagementapplicationsofnotebook computersandLi-ionbatteryprotectioncircuit. FEATURES ?Lowon-stateresistance RDS(on)1=13mΩMAX.(VGS=?10V,ID=?5.0A) RDS(on)2=20.9mΩMAX.(VGS=?4.5

UPA2719GR

SWITCHINGP-CHANNELPOWERMOSFET