首頁(yè) >RT8206MZQW>規(guī)格書列表
| 零件編號(hào) | 下載 訂購(gòu) | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
23watt;MiniSpiralCompactFluorescent;2700K;82CRI;GU24base;120volts | SATCO Satco Products, Inc. | SATCO | ||
BATTERYPROTECTIONICFOR1-CELLPACK | SIISeiko Instruments Inc 精工愛普生精工愛普生株式會(huì)社 | SII | ||
BATTERYPROTECTIONICFOR1-CELLPACK(SECONDARYPROTECTION) | ABLICABLIC Inc. 艾普凌科艾普凌科有限公司 | ABLIC | ||
REMOTEFANCONTROLIC REMOTEFANCONTROLIC SC8206isahighperformanceelectronicfancontrollerLSI,Speedcontrol,off-timer,naturewind,sleepmodeareallbuiltintoasinglechip.Lightcontrol,buzzeroutput,keycontrolinput,aswellasremotecontroldecodingcircuitryareallprovidedtobuildafullfunc | SILANSilan Microelectronics Joint-stock 士蘭微杭州士蘭微電子股份有限公司 | SILAN | ||
Common-DrainDualN-ChannelEnhancementModeMOSFET | SYNC-POWERSYNC POWER Crop. 擎力科技擎力科技股份有限公司 | SYNC-POWER | ||
DualN-ChannelEnhancementModeFieldEffectTransistor FEATURES ●SuperhighdensecelldesignforlowRDS(ON). ●Ruggedandreliable. ●SurfaceMountPackage. | SamhopSamHop Microelectronics Corp. 三合微科三合微科股份有限公司 | Samhop | ||
DualN-ChannelEnhancementModeFieldEffectTransistor FEATURES ●SuperhighdensecelldesignforlowRDS(ON). ●Ruggedandreliable. ●SurfaceMountPackage. | SamhopSamHop Microelectronics Corp. 三合微科三合微科股份有限公司 | Samhop | ||
MultistandardTVAudioProcessorandDigitalSoundDemodulator GeneralDescription Overview TheSTV82x6iscomposedofthreemainparts: 1.TVSoundDemodulator:providesallthenecessarycircuitryforthedemodulationofaudiotransmissionsofEuropeanandAsianterrestrialTVbroadcasts.Thevarioustransmissionstandardsareautomaticallydetectedand | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán) | STMICROELECTRONICS | ||
DualN-Channel60V(D-S)175?CMOSFET FEATURES ?TrenchFET?powerMOSFET ?100RgandUIStested | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體（臺(tái)灣）有限公司 | VBSEMI | ||
TOSHIBAFieldEffectTransistorSiliconNChannelMOSType(U-MOSII) LithiumIonBatteryApplications NotebookPCApplications PortableEquipmentApplications ●Smallfootprintduetosmallandthinpackage ●Lowdrain-sourceONresistance:RDS(ON)=40m?(typ.) ●Highforwardtransferadmittance:|Yfs|=7.0S(typ.) ●Lowleakagecurrent:IDSS=10μA(ma | TOSHIBAToshiba Semiconductor 東芝株式會(huì)社東芝 | TOSHIBA |
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