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7443091080

Marking：R80；WE-HCM SMT High Current Flat Wire Inductor

GeneralInformation: Itisrecommendedthatthetemperatureofthecomponentdoesnotexceed+125°Cunderworst caseconditions AmbientTemperature(referring toIR)-40upto+85°C OperatingTemperature-40upto+125°C StorageConditions(inoriginal packaging)

R8003KND3

Marking：R8003KND3；Package：TO-252；Nch 800V 3A Power MOSFET

lFeatures 1)Lowon-resistance 2)Fastswitching 3)Paralleluseiseasy 4)Pb-freeplating;RoHScompliant lApplication Switching

R8011KNZ4

Marking：R8011KNZ4；Package：TO-247G；Nch 800V 11A Power MOSFET

Features 1)Lowon-resistance 2)Fastswitching 3)Paralleluseiseasy 4)Pb-freeleadplating;RoHScompliant Application Switching

R8019KNZ4

Marking：R8019KNZ4；Package：TO-247G；Nch 800V 19A Power MOSFET

Features 1)Lowon-resistance 2)Fastswitching 3)Paralleluseiseasy 4)Pb-freeleadplating;RoHScompliant Application Switching

SGM836-4.0

Marking：R80XX；Package：SOT-23-6；Microprocessor Supervisory Circuit with Programmable Delay Time

GENERALDESCRIPTION TheSGM836familycanmonitorsystemvoltagesfrom0.4Vto5V.Whenthedetectionvoltagefallsbelowthepresetthreshold(VITL)orthemanualreset(nMR)pinisdrivenlow,theopen-drainnRESEToutputisasserted.AfterthedetectionvoltageandnMRvoltagereturnhigherth

R8001CND3FRA

Marking：R8001CND3；Package：TO-252；Nch 800V 1A Power MOSFET

R8002ANJFRG

Marking：R8002ANJ；Package：TO-263S；Nch 800V 2A Power MOSFET

R8002CND3FRA

Marking：R8002CND3；Package：TO-252；Nch 800V 2A Power MOSFET

R8002KND3

Marking：R8002KND3；Package：TO-252；Nch 800V 1.6A Power MOSFET

R8002KNX

Marking：R8002KNX；Package：TO-220FM；Nch 800V 1.6A Power MOSFET