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74438440200065

Marking：R65；WE-MXGI SMT Power Inductor

GeneralInformation: AmbientTemperature(referring toIRP)-40°Cupto+85°C OperatingTemperature-40°Cupto+125°C StorageConditions(inoriginal packaging)

R6520ENZ4

Marking：R6520ENZ4；Package：TO-247G；Nch 650V 20A Power MOSFET

lFeatures 1)Lowon-resistance 2)Fastswitching 3)Paralleluseiseasy 4)Pb-freeplating;RoHScompliant lApplication Switching

R6520KNZ4

Marking：R6520KNZ4；Package：TO-247；Nch 650V 20A Power MOSFET

Features 1)Lowon-resistance 2)Fastswitchingspeed 3)Paralleluseiseasy 4)Pb-freeplating;RoHScompliant Application Switching

R6524ENZ4

Marking：R6524ENZ4；Package：TO-247G；Nch 650V 24A Power MOSFET

lFeatures 1)Lowon-resistance 2)Fastswitching 3)Paralleluseiseasy 4)Pb-freeplating;RoHScompliant lApplication Switching

R6524KNZ1

Marking：R6524KNZ1；Package：TO-247；Nch 650V 24A Power MOSFET

lFeatures 1)Lowon-resistance 2)Ultrafastswitchingspeed 3)Paralleluseiseasy 4)Pb-freeplating;RoHScompliant lApplication SwitchingObsolete

R6524KNZ4

Marking：R6524KNZ4；Package：TO-247G；Nch 650V 24A Power MOSFET

lFeatures 1)Lowon-resistance 2)Fastswitching 3)Paralleluseiseasy 4)Pb-freeplating;RoHScompliant lApplication Switching

R6530ENZ4

Marking：R6530ENZ4；Package：TO-247G；Nch 650V 30A Power MOSFET

lFeatures 1)Lowon-resistance 2)Fastswitching 3)Paralleluseiseasy 4)Pb-freeplating;RoHScompliant lApplication Switching

R6530KNZ4

Marking：R6530KNZ4；Package：TO-247G；Nch 650V 30A Power MOSFET

lFeatures 1)Lowon-resistance 2)Fastswitching 3)Paralleluseiseasy 4)Pb-freeplating;RoHScompliant lApplication Switching

R6535ENZ4

Marking：R6535ENZ4；Package：TO-247G；Nch 650V 35A Power MOSFET

lFeatures 1)Lowon-resistance 2)Fastswitching 3)Paralleluseiseasy 4)Pb-freeplating;RoHScompliant lApplication Switching

R6535KNZ4

Marking：R6535KNZ4；Package：TO-247G；Nch 650V 35A Power MOSFET

lFeatures 1)Lowon-resistance 2)Fastswitching 3)Paralleluseiseasy 4)Pb-freeplating;RoHScompliant lApplication Switching