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QPA1009D

10.7?-?12.7 GHz 17.5 Watt GaN Amplifier; ? Frequency Range: 10.7 - 12.7 GHz\n? PSAT (PIN=27 dBm): > 43.5 dBm\n? PAE (PIN=27 dBm): > 40 %\n? Power Gain (PIN=27 dBm): > 17 dB\n? Small Signal Gain: > 22 dB\n? Bias: VD = 20 V, IDQ = 600 mA\n? Die Dimensions: 3.16 x 4.24 x 0.10 mm\n;

Qorvo's QPA1009D is a wide band power amplifier MMIC fabricated on Qorvo's production 0.15 um GaN on SiC process (QGaN15). Covering 10.7?–?12.7 GHz, the QPA1009D provides > 17.5 Watts of saturated output power and 17 dB of large-signal gain while achieving > 40% power-added efficiency.\nThe QPA1009D RF input port is DC coupled to ground for optimum ESD performance. The QPA1009D RF ports have DC blocking capacitors and are matched to 50 ohms.\nThe QPA1009D can support a wide range of operating conditions, including CW operation, making it well-suited for both commercial and military systems.\nLead-free and RoHS compliant.\nFor additional information on GaN thermal performance refer to the following application note and video.\n

QPA1009D

10.7 ??12.7 GHz 17.5 Watt GaN Amplifier

QPA1009DEVBV1

10.7 ??12.7 GHz 17.5 Watt GaN Amplifier

QPD1009

15W,50V,DC??4GHz,GaNRFTransistor

QPD1009

15W,50V,DC–4GHz,GaNRFTransistor

ProductFeatures ?Frequency:DCto4GHz ?OutputPower(P3dB):17Wat2GHz ?LinearGain:24dBat2GHz ?TypicalPAE3dB:72at2GHz ?OperatingVoltage:50V ?Lowthermalresistancepackage ?CWandPulsecapable ?3x3mmpackage

RH1009

2.5VReference

RH1009

QuadPrecisionOperationalAmplifier

RHF1009A

Rad-hardadjustable2.5V/5.5VprecisionshuntV-ref

Features ?Adjustableshunt,2.5Vto5.5V ?Highprecision±0.2at2.5Vat25°C ?Wideoperatingcurrent:60μAto12mA ?30ppm/°Cmaximumtemperaturerangeat 2.5V ?Stableoncapacitiveload Description TheRHF1009Aisalow-poweradjustable2.5Vvoltagereference,specifically

RN1009

Switching,InverterCircuit,InterfaceCircuitAndDriverCircuitApplications

RSZ-1009

1WattSMDMiniatureIsolatedSingleOutput