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QPD1009

15W, 50V, DC – 4 GHz, GaN RF Transistor

ProductFeatures ?Frequency:DCto4GHz ?OutputPower(P3dB):17Wat2GHz ?LinearGain:24dBat2GHz ?TypicalPAE3dB:72at2GHz ?OperatingVoltage:50V ?Lowthermalresistancepackage ?CWandPulsecapable ?3x3mmpackage

QPD1009

DC - 4 GHz, 15 Watt, 50 V GaN RF Transistor; ? Frequency range: DC - 4 GHz\n? Output power (P3dB): 17 W at 2 GHz\n? Linear gain: 24 dB typical at 2 GHz\n? Typical PAE3dB: 72% at 2 GHz\n? Operating voltage: 50V\n? Low thermal resistance package\n? CW and pulse capable\n? 3 x 3 mm package\n;

The Qorvo QPD1009 is a 15 W (P3dB) discrete GaN on SiC HEMT which operates from DC to 4 GHz. The device is constructed with Qorvo's proven QGaN25HV process, which features advanced field plate techniques to optimize power and efficiency at high drain bias operating conditions. This optimization can potentially lower system costs in terms of fewer amplifier line-ups and lower thermal management costs.\nThe device is housed in an industry-standard 3 x 3 mm surface mount QFN package.\nLead-free and ROHS compliant.\nEvaluation boards are available upon request.\n?\n

QPD1009

15W, 50V, DC ??4 GHz, GaN RF Transistor

QPD1009EVB01

15W, 50V, DC – 4 GHz, GaN RF Transistor

ProductFeatures ?Frequency:DCto4GHz ?OutputPower(P3dB):17Wat2GHz ?LinearGain:24dBat2GHz ?TypicalPAE3dB:72at2GHz ?OperatingVoltage:50V ?Lowthermalresistancepackage ?CWandPulsecapable ?3x3mmpackage

QPD1009EVB02

15W, 50V, DC – 4 GHz, GaN RF Transistor

ProductFeatures ?Frequency:DCto4GHz ?OutputPower(P3dB):17Wat2GHz ?LinearGain:24dBat2GHz ?TypicalPAE3dB:72at2GHz ?OperatingVoltage:50V ?Lowthermalresistancepackage ?CWandPulsecapable ?3x3mmpackage

QPD1009S2

15W, 50V, DC – 4 GHz, GaN RF Transistor

ProductFeatures ?Frequency:DCto4GHz ?OutputPower(P3dB):17Wat2GHz ?LinearGain:24dBat2GHz ?TypicalPAE3dB:72at2GHz ?OperatingVoltage:50V ?Lowthermalresistancepackage ?CWandPulsecapable ?3x3mmpackage

QPD1009TR7

15W, 50V, DC – 4 GHz, GaN RF Transistor

ProductFeatures ?Frequency:DCto4GHz ?OutputPower(P3dB):17Wat2GHz ?LinearGain:24dBat2GHz ?TypicalPAE3dB:72at2GHz ?OperatingVoltage:50V ?Lowthermalresistancepackage ?CWandPulsecapable ?3x3mmpackage

QPD1009EVB02

15W, 50V, DC ??4 GHz, GaN RF Transistor