最新无码a∨在线观看,一本av高清一区二区三区,亚洲熟妇色l20p,宅男噜噜69av,中出あ人妻熟女中文字幕

PXFC191507FC

Thermally-Enhanced High Power RF LDMOS FET 150 W, 28 V, 1805 – 1990 MHz

Description ThePXFC191507FCisa150-wattLDMOSFETintendedforuse inmulti-standardcellularpoweramplifierapplicationsinthe1805 to1990MHzfrequencyband.Featuresincludeinputandoutput matching,highgainandthermally-enhancedpackagewithearless flanges.ManufacturedwithWo

PXFC191507FC

Thermally-Enhanced High Power RF LDMOS FET 150 W, 28 V, 1805 ??1990 MHz

PXFC191507FC

Thermally-Enhanced High Power RF LDMOS FET

PXFC191507FC

Thermally-Enhanced High Power RF LDMOS FET;

PXFC191507FCV1

Cellular (1800 MHz to 1995 MHz); ·Broadband internal input and output matching\n ·Typical Pulsed CW performance, 1990 MHz, 28 V, 10 μs pulse width, 10% duty cycle, class AB test - Output power at P1dB = 140 W - Efficiency = 54% - Gain = 19.5 dB\n ·Typical single-carrier WCDMA performance, 1990 MHz, 28 V, 10 dB PAR @ 0.01% CCDF, Test Model 1 with 16 DPCH - Output power = 32 W avg - Efficiency = 34% - Gain = 20 dB - ACPR = –31 dBc@ 5 MHz\n ·Capable of handling 10:1 VSWR @28 V, 150 W (CW) output power\n ·Integrated ESD protection\n ·ESD:?Human Body Model, Class 1C (per ANSI/ESDA/JEDEC JS-001)\n ·Low thermal resistance\n ·Package: H-37248G-4/2, earless\n;

High Power RF LDMOS FET, 150 W, 28 V, 1805 – 1990 MHz

PXFC191507FC-V1

High Power RF LDMOS FET 150 W; 28 V; 1805 - 1990 MHz; ·Broadband internal input and output matching\n·Typical Pulsed CW performance; 1990 MHz; 28 V; class AB test: Output power at P1dB = 140 W; Efficiency = 54%; Gain = 19.5 dB\n·Capable of handling 10:1 VSWR @28 V; 150 W (CW) output power\n·Integrated ESD protection: Human Body Model; Class 1C (per JESD22-A114)\n·Low thermal resistance\n·Pb-free and RoHS compliant\n;

The PXFC191507FC is a 150-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1805 to 1990 MHz frequency band. Features include input and output matching; high gain and thermally-enhanced package with earless flanges. Manufactured with an advanced LDMOS process; this device provides excellent thermal performance and superior reliability.\n

PXFC191507FC-V1-R0

Thermally-Enhanced High Power RF LDMOS FET 150 W, 28 V, 1805 – 1990 MHz

Description ThePXFC191507FCisa150-wattLDMOSFETintendedforuse inmulti-standardcellularpoweramplifierapplicationsinthe1805 to1990MHzfrequencyband.Featuresincludeinputandoutput matching,highgainandthermally-enhancedpackagewithearless flanges.ManufacturedwithWo

PXFC191507FC-V1-R250

Thermally-Enhanced High Power RF LDMOS FET 150 W, 28 V, 1805 – 1990 MHz

Description ThePXFC191507FCisa150-wattLDMOSFETintendedforuse inmulti-standardcellularpoweramplifierapplicationsinthe1805 to1990MHzfrequencyband.Featuresincludeinputandoutput matching,highgainandthermally-enhancedpackagewithearless flanges.ManufacturedwithWo

PXFC191507FC_16

Thermally-Enhanced High Power RF LDMOS FET 150 W, 28 V, 1805 ??1990 MHz

PXFC191507FCV1R0

Thermally-Enhanced High Power RF LDMOS FET 150 W, 28 V, 1805 ??1990 MHz