描述 Description

High Power RF LDMOS FET, 70 W, 28 V, 1805 – 1880 MHz

特性 Features

·Broadband input and output matching
·Typical EDGE performance - Average output power = 44 dBm - Gain = 16.5 dB - Efficiency = 40.5% - EVM = 2.0%
·Typical CW performance - Output power at P1dB = 72 W - Gain = 15.5 dB - Efficiency = 59%
·Capable of handling 10:1 VSWR @ 28 V, 70 W (CW) output power
·Integrated ESD protection. Human Body Model, Class 2 (minimum)?
·Excellent thermal stability, low HCI drift
·Pb-free and RoHS compliant
·Package: H-37265-2, earless

簡介

PTFA180701FV4屬于分立半導體產品的晶體管-FETMOSFET-射頻。由制造生產的PTFA180701FV4晶體管 - FET，MOSFET - 射頻射頻晶體管、FET 和 MOSFET 是具有三個端子的半導體器件，器件中電流受電場控制。該系列器件用于涉及射頻的設備。用于放大或切換信號或功率的晶體管類型包括：E-pHEMT、LDMOS、MESFET、N 溝道、P 溝道、pHEMT、碳化硅、2 N 溝道和 4 N 溝道。