首頁 >PSMN4R8-100PSE>規(guī)格書列表
零件型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
---|---|---|---|---|
PSMN4R8-100PSE | isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent-ID=120A@TC=25℃ ·DrainSourceVoltage-VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=4.8mΩ(Max)@VGS=10V DESCRIPTION ·DC-to-DCConverter ·GeneralIndustrialApplications ·PowerMotorControl | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司 | ISC | |
PSMN4R8-100PSE | N-channel 100 V 5 mΩ standard level MOSFET with improved SOA in TO220 package; ? Enhanced safe operating area (SOA) for superior protection during linear mode operation\n? Very low RDS(on) for low conduction losses\n; Standard level N-channel MOSFET with improved SOA in a TO220 package. Part of Nexperia's \"NextPower Live\" portfolio, the PSMN4R8-100PSE is robust enough to withstand substantial in-rush and fault condition currents during turn on/off, whilst offering a low RDS(on) characteristic to keep temperatures down and efficiency up in continued use. Ideal for telecommunication systems based on 48 V backplanes / supply rails.\n | NexperiaNexperia B.V. All rights reserved 安世安世半導體(中國)有限公司 | Nexperia | |
PSMN4R8-100PSE | 絲印:PSMN4R8-100PSE;Package:TO-220AB;N-channel 100 V 5 m廓 standard level MOSFET with improved SOA in TO220 package | NEXPERIANexperia B.V. All rights reserved 安世安世半導體(中國)有限公司 | NEXPERIA | |
N-channel 100 V 5 m廓 standard level MOSFET with improved SOA in TO220 package | PhilipsPhilips Semiconductors 飛利浦荷蘭皇家飛利浦 | Philips | ||
N-channel100V4.8m廓standardlevelMOSFETinD2PAK | NEXPERIANexperia B.V. All rights reserved 安世安世半導體(中國)有限公司 | NEXPERIA | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=120A@TC=25℃ ·DrainSourceVoltage-VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=4.8mΩ(Max)@VGS=10V DESCRIPTION ·DC-to-DCConverter ·GeneralIndustrialApplications ·PowerMotorControl | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司 | ISC | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=120A@TC=25℃ ·DrainSourceVoltage :VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=4.8mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司 | ISC | ||
N-channel100V,4.8mOhmMOSFETwithenhancedSOAinLFPAK56E 1.Generaldescription N-channelenhancementmodeMOSFETinaLFPAK56Epackagequalifiedto175°C.Partof Nexperia'sASFETsforhotswapportfolio,thePSMN4R8-100YSEdeliversverylowRDSonanda verystronglinear-mode(SOA)performanceinahigh-reliabilitycopper-clipLFPAK56Epackage. PS | NEXPERIANexperia B.V. All rights reserved 安世安世半導體(中國)有限公司 | NEXPERIA |
技術(shù)參數(shù)
- Package name:
TO-220AB
- Product status:
Production
- Channel type:
N
- Number of transistors:
1
- V_DS [max] (V):
100
- R_DSon [max] @ V_GS = 10 V (mΩ):
5
- T_j [max] (°C):
175
- I_D [max] (A):
120
- Q_GD [typ] (nC):
59
- Q_G(tot) [typ] @ V_GS = 10 V (nC):
196
- P_tot [max] (W):
405
- Q_r [typ] (nC):
227
- V_GSth [typ] (V):
3
- Automotive qualified:
N
- C_iss [typ] (pF):
10665
- C_oss [typ] (pF):
674
- Date:
2014-05-16
供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
恩XP |
19+ |
TO-220 |
500 |
全新原裝公司現(xiàn)貨
|
詢價 | ||
恩XP |
23+ |
TO-220 |
500 |
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力 |
詢價 | ||
恩XP |
23+ |
TO220 |
90000 |
一定原裝正品 |
詢價 | ||
NEXPERIA/安世 |
21+ |
TO-220 |
10000 |
全新原裝 公司現(xiàn)貨 價格優(yōu) |
詢價 | ||
NEXPERIA/安世 |
23+ |
TO220 |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價 | ||
恩XP |
2022+ |
TO-220 |
32500 |
原廠代理 終端免費提供樣品 |
詢價 | ||
恩XP |
23+ |
TO-220 |
6000 |
原裝正品,支持實單 |
詢價 | ||
恩XP |
19+ |
TO-220 |
500 |
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力 |
詢價 | ||
NEXPERIA/安世 |
2023+ |
TO-220 |
4030 |
一級代理優(yōu)勢現(xiàn)貨,全新正品直營店 |
詢價 | ||
NEXPERIA/安世 |
23+ |
TO-220 |
89630 |
當天發(fā)貨全新原裝現(xiàn)貨 |
詢價 |
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