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PSMN0R9-30ULD

絲?。?a target="_blank" title="Marking" href="/0d93ul/marking.html">0D93UL；Package：SOT1023A；N-channel 30 V, 0.87 mΩ, 300 A logic level MOSFET in SOT1023A enhanced package for UL2595, using NextPowerS3 Schottky-Plus Technology

1.Generaldescription SOT1023AwithimprovedcreepageandclearancetomeetUL2595requirements.300Amplogic levelgatedriveN-channelenhancementmodeMOSFETinLFPAK56package.NextPowerS3 portfolioutilisingNexperia’sunique“SchottkyPlus”technologydelivershighefficiency,lowspikin

PSMN0R9-30ULD

N-channel 30 V, 0.87 mΩ, 300 A logic level MOSFET in SOT1023A enhanced package for UL2595, using NextPowerS3 Schottky-Plus Technology; ? Improved creepage and clearance – meets the requirements of UL2595\n? 300 A capability\n? Avalanche rated, 100% tested at IAS = 190 A\n? Ultra low QG, QGD and QOSS for high system efficiency, especially at higher switching frequencies\n? Superfast switching with soft-recovery; s-factor > 1\n? Low spiking and ringing for low EMI designs\n? Unique “SchottkyPlus” technology; Schottky-like performance with < 1 μA leakage at 25°C\n? Optimised for 4.5 V gate drive\n? Low parasitic inductance and resistance\n? High reliability clip bonded and solder die attach Power SO8 package; no glue, no wire bonds, qualified to 150°C\n? Wave solderable; exposed leads for optimal visual solder inspection\n;

SOT1023A with improved creepage and clearance to meet UL2595 requirements. 300 Amp logic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package. NextPowerS3 portfolio utilising Nexperia’s unique “SchottkyPlus” technology delivers high efficiency, low spiking performance usually associated with MOSFETs with an integrated Schottky or Schottky-like diode but without problematic high leakage current. NextPowerS3 is particularly suited to high efficiency applications at high switching frequencies.\n

PSMN0R9-30YLD

N-channel30V,0.87m廓,300AlogiclevelMOSFETinLFPAK56usingNextPowerS3Technology