1. General description

SOT1023A with improved creepage and clearance to meet UL2595 requirements. 300 Amp logic

level gate drive N-channel enhancement mode MOSFET in LFPAK56 package. NextPowerS3

portfolio utilising Nexperia’s unique “SchottkyPlus” technology delivers high efficiency, low spiking

performance usually associated with MOSFETs with an integrated Schottky or Schottky-like diode

but without problematic high leakage current. NextPowerS3 is particularly suited to high efficiency

applications at high switching frequencies.

2. Features and benefits

? Improved creepage and clearance – meets the requirements of UL2595

? 300 A capability

? Avalanche rated, 100 tested at IAS = 190 A

? Ultra low QG, QGD and QOSS for high system efficiency, especially at higher switching

frequencies

? Superfast switching with soft-recovery; s-factor > 1

? Low spiking and ringing for low EMI designs

? Unique “SchottkyPlus” technology; Schottky-like performance with < 1 μA leakage at 25 °C

? Optimised for 4.5 V gate drive

? Low parasitic inductance and resistance

? High reliability clip bonded and solder die attach Power SO8 package; no glue, no wire bonds,

qualified to 150 °C

? Wave solderable; exposed leads for optimal visual solder inspection

3. Applications

? Brushed and brushless motor control

? Battery powered appliances where enhanced creepage and clearance is required to meet

UL2595

? For non-UL2595 applications please use PSMN0R9-30YLD