零件型號(hào) | 下載 訂購(gòu) | 功能描述 | 制造商 上傳企業(yè) | LOGO |
---|---|---|---|---|
PHN210 | Dual N-channel enhancement mode TrenchMOS transistor GENERALDESCRIPTION DualN-channelenhancementmodefield-effecttransistorinaplasticenvelopeusing’trench’technology. FEATURES ?Dualdevice ?Lowthresholdvoltage ?Fastswitching ?Logiclevelcompatible ?Surfacemountpackage Applications:- ?Motorandrelaydrivers ?d.c.to | PHIPhilips Semiconductors 飛利浦荷蘭皇家飛利浦 | PHI | |
PHN210 | Dual N-channel enhancement mode TrenchMOSTM transistor FEATURES ?Dualdevice ?Lowthresholdvoltage ?Fastswitching ?Logiclevelcompatible ?Surfacemountpackage GENERALDESCRIPTION DualN-channelenhancement modefield-effecttransistorina plasticenvelopeusing’trench’ technology. Applications:- ?Motorandrelaydrivers ? | NEXPERIANexperia B.V. All rights reserved 安世安世半導(dǎo)體(中國(guó))有限公司 | NEXPERIA | |
PHN210 | Dual N-channel TrenchMOS intermediate level FET; Dual intermediate level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.\n | NexperiaNexperia B.V. All rights reserved 安世安世半導(dǎo)體(中國(guó))有限公司 | Nexperia | |
PHN210 | Dual N-channel enhancement mode TrenchMOS transistor; | 恩XP | 恩XP | |
Dual N-channel TrenchMOS intermediate level FET 1.1Generaldescription DualintermediatelevelN-channelenhancementmodeField-EffectTransistor(FET)ina plasticpackageusingTrenchMOStechnology.Thisproductisdesignedandqualifiedfor useincomputing,communications,consumerandindustrialapplicationsonly. 1.2Featuresandben | NEXPERIANexperia B.V. All rights reserved 安世安世半導(dǎo)體(中國(guó))有限公司 | NEXPERIA | ||
PHN210T - Dual N-channel TrenchMOS intermediate level FET ; ·Suitable for high frequency applications due to fast switching characteristics\n·Suitable for logic level gate drive sources\n·Suitable for low gate drive sources\n; Dual N-channel TrenchMOS intermediate level FET - Dual intermediate level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. | NexperiaNexperia B.V. All rights reserved 安世安世半導(dǎo)體(中國(guó))有限公司 | Nexperia | ||
Dual N-channel enhancement mode | ETC | ETC |
技術(shù)參數(shù)
- Package name:
SO8
- Product status:
Production
- Channel type:
N
- Number of transistors:
2
- V_DS [max] (V):
30
- R_DSon [max] @ V_GS = 10 V (mΩ):
100
- R_DSon [max] @ V_GS = 4.5 V (mΩ):
200
- T_j [max] (°C):
150
- I_D [max] (A):
3.4
- Q_GD [typ] (nC):
0.7
- Q_G(tot) [typ] @ V_GS = 10 V (nC):
6
- P_tot [max] (W):
2
- Q_r [typ] (nC):
55
- V_GSth [typ] (V):
2
- Automotive qualified:
N
- C_iss [typ] (pF):
250
- C_oss [typ] (pF):
88
- Date:
2011-01-05
供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
PHI |
24+ |
SOP |
2 |
只做原廠渠道 可追溯貨源 |
詢價(jià) | ||
PHI |
25+ |
SOP-8 |
3000 |
福安甌為您提供真芯庫(kù)存,真誠(chéng)服務(wù) |
詢價(jià) | ||
PHI |
23+ |
SSOP |
12300 |
詢價(jià) | |||
PHI |
05+ |
原廠原裝 |
1869 |
只做全新原裝真實(shí)現(xiàn)貨供應(yīng) |
詢價(jià) | ||
24+ |
3000 |
公司存貨 |
詢價(jià) | ||||
PHI |
2016+ |
SOP8 |
6523 |
只做進(jìn)口原裝現(xiàn)貨!假一賠十! |
詢價(jià) | ||
PHI |
23+ |
SMD |
3500 |
絕對(duì)全新原裝!現(xiàn)貨!特價(jià)!請(qǐng)放心訂購(gòu)! |
詢價(jià) | ||
恩XP |
2016+ |
SOP8 |
9000 |
只做原裝,假一罰十,公司可開(kāi)17%增值稅發(fā)票! |
詢價(jià) | ||
PH |
23+ |
SMD |
5000 |
原裝正品,假一罰十 |
詢價(jià) | ||
PHI |
24+ |
SOP-8 |
6980 |
原裝現(xiàn)貨,可開(kāi)13%稅票 |
詢價(jià) |
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