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PHN210T

Dual N-channel TrenchMOS intermediate level FET

1.1Generaldescription DualintermediatelevelN-channelenhancementmodeField-EffectTransistor(FET)ina plasticpackageusingTrenchMOStechnology.Thisproductisdesignedandqualifiedfor useincomputing,communications,consumerandindustrialapplicationsonly. 1.2Featuresandben

NEXPERIANexperia B.V. All rights reserved

安世安世半導體(中國)有限公司

PHN210T

PHN210T - Dual N-channel TrenchMOS intermediate level FET; ·Suitable for high frequency applications due to fast switching characteristics\n·Suitable for logic level gate drive sources\n·Suitable for low gate drive sources\n;

Dual N-channel TrenchMOS intermediate level FET - Dual intermediate level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.

NexperiaNexperia B.V. All rights reserved

安世安世半導體(中國)有限公司

PM210

Ultra-linearMixer

SJM

SJM Prewell. All Rights Reserved.

PM210

Ultra-linearMixer

SJM

SJM Prewell. All Rights Reserved.

PMBFJ210

N-channelfield-effecttransistors

DESCRIPTION N-channelsymmetricaljunctionfield-effecttransistorinaSOT23package. FEATURES ?Highspeedswitching ?Interchangeabilityofdrainandsourceconnections ?Highimpedance. APPLICATIONS ?Analogswitches ?Choppers,multiplexersandcommutators ?Audioamplifiers.

PhilipsPhilips Semiconductors

飛利浦荷蘭皇家飛利浦

PM-OM210

COMMONMODELINECHOKES

PMI

Premier Magnetics, Inc.

PMR210

RCunit,classX1,metallizedpaperwithintegratedresistor

ETCList of Unclassifed Manufacturers

未分類制造商

PMS210

SurfaceMountGlassPassivatedBridgeRectifier

Features ?Glasspassivatedchipjunction ?Ideallysuitedforautomaticassembly ?Savespaceonprintedcircuitboards ?Ultrathinprofilepackageforspaceconstrainedutilization ?LeadfreeincompliancewithEURoHS2.0 ?Halogen-freeaccordingtoIEC61249standard MechanicalData

PANJITPan Jit International Inc.

強茂強茂股份有限公司

POPA210ID

OPAx2102.2-nV/??zPrecision,Low-Power,36-VOperationalAmplifiers

TITexas Instruments

德州儀器美國德州儀器公司

POPA210IDBVR

OPAx2102.2-nV/??zPrecision,Low-Power,36-VOperationalAmplifiers

TITexas Instruments

德州儀器美國德州儀器公司

技術(shù)參數(shù)

  • Package name:

    SO8

  • Product status:

    Production

  • Channel type:

    N

  • Number of transistors:

    2

  • V_DS [max] (V):

    30

  • R_DSon [max] @ V_GS = 10 V (mΩ):

    100

  • R_DSon [max] @ V_GS = 4.5 V (mΩ):

    200

  • T_j [max] (°C):

    150

  • I_D [max] (A):

    3.4

  • Q_GD [typ] (nC):

    0.7

  • Q_G(tot) [typ] @ V_GS = 10 V (nC):

    6

  • P_tot [max] (W):

    2

  • Q_r [typ] (nC):

    55

  • V_GSth [typ] (V):

    2

  • Automotive qualified:

    N

  • C_iss [typ] (pF):

    250

  • C_oss [typ] (pF):

    88

  • Date:

    2011-01-05

供應(yīng)商型號品牌批號封裝庫存備注價格
恩XP
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PH
23+
TO251
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更多PHN210T供應(yīng)商 更新時間2025-7-27 14:14:00