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PHB24N03T

TrenchMOS transistor Standard level FET

GENERALDESCRIPTION N-channelenhancementmodestandardlevelfield-effectpowertransistorinaplasticenvelopesuitableforsurfacemountingusing’trench’technology.Thedevicefeaturesverylowon-stateresistanceandhasintegralzenerdiodesgivingESDprotectionupto2kV.Itisintended

PhilipsPhilips Semiconductors

飛利浦荷蘭皇家飛利浦

PHD24N03

TrenchMOStransistorLogiclevelFET

Description N-channelenhancementmodefield-effecttransistorinaplasticpackageusingTrenchMOS?1technology. Productavailability:PHD24N03LTinSOT428(D-PAK). Features ■TrenchMOS?technology ■Lowon-stateresistance ■Avalancheruggednessrated ■Logiclevelcompati

PhilipsPhilips Semiconductors

飛利浦荷蘭皇家飛利浦

PHD24N03LT

TrenchMOStransistorLogiclevelFET

Description N-channelenhancementmodefield-effecttransistorinaplasticpackageusingTrenchMOS?1technology. Productavailability:PHD24N03LTinSOT428(D-PAK). Features ■TrenchMOS?technology ■Lowon-stateresistance ■Avalancheruggednessrated ■Logiclevelcompati

PhilipsPhilips Semiconductors

飛利浦荷蘭皇家飛利浦

PHD24N03LT

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=20A@TC=25℃ ·DrainSourceVoltage-VDSS=30V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=50mΩ(Max)@VGS=10V DESCRIPTION ·DC-to-DCConverter ·GeneralIndustrialApplications ·PowerMotorControl

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

PHP24N03LT

TrenchMOStransistorLogiclevelFET

GENERALDESCRIPTION N-channelenhancementmodelogiclevelfield-effectpowertransistorinaplasticenvelopeusing’trench’technology. Thedevicehasverylowon-stateresistance.Itisintendedforuseindctodcconvertersandgeneralpurposeswitchingapplications. ThePHP24N03LTissupp

PhilipsPhilips Semiconductors

飛利浦荷蘭皇家飛利浦

PHP24N03LT

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=24A@TC=25℃ ·DrainSourceVoltage-VDSS=30V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=50mΩ(Max)@VGS=10V DESCRIPTION ·DC-to-DCConverter ·GeneralIndustrialApplications ·PowerMotorControl

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

PHP24N03T

TrenchMOStransistorStandardlevelFET

GENERALDESCRIPTION N-channelenhancementmodestandardlevelfield-effectpowertransistorinaplasticenvelopeusing’trench’technology.Thedevicefeaturesverylowon-stateresistanceandhasintegralzenerdiodesgivingESDprotectionupto2kV.ItisintendedforuseinDC-DCconvertersa

PhilipsPhilips Semiconductors

飛利浦荷蘭皇家飛利浦

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恩XP
23+
TO-263
11846
一級(jí)代理商現(xiàn)貨批發(fā),原裝正品,假一罰十
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PHI
2022+
SOT404(D2PAK)
6433
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N
23+
SOT404(D
6000
原裝正品,支持實(shí)單
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PHI
2022+
SOT404(D2PAK)
48000
只做原裝,原裝,假一罰十
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N
25+
SOT404(D
12300
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乾坤
24+
2520
990
全新原裝數(shù)量均有多電話咨詢(xún)
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CYNTEC
24+
SMD
5000
全現(xiàn)原裝公司現(xiàn)貨
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CYNTEC
20+
電感器
682000
電感原裝優(yōu)勢(shì)主營(yíng)型號(hào)-可開(kāi)原型號(hào)增稅票
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CYNTEC
23+
NR252010
50000
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CYNTEC
23+
NR252010
125800
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更多PHB24N03T供應(yīng)商 更新時(shí)間2025-7-16 11:47:00