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PDTB123T

PNP 500 mA, 50 V resistor-equipped transistors; R1 = 2.2 k廓, R2 = open

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PDTB123TK

NPN 500 mA, 50 V resistor-equipped transistors; R1 = 2.2 kΩ, R2 = open

Features *Built-inbiasresistors *Simplifiescircuitdesign *500mAoutputcurrentcapability *Reducescomponentcount *Reducespickandplacecosts

PDTB123TS

NPN 500 mA, 50 V resistor-equipped transistors; R1 = 2.2 kΩ, R2 = open

Features *Built-inbiasresistors *Simplifiescircuitdesign *500mAoutputcurrentcapability *Reducescomponentcount *Reducespickandplacecosts

PDTB123TT

絲印：1U；Package：SOT23；PNP 500 mA, 50 V resistor-equipped transistor; R1 = 2.2 kΩ, R2 = open

Featuresandbenefits *500mAoutputcurrentcapability *Built-inbiasresistor *Simplifiescircuitdesign *Reducescomponentcount *Reducespickandplacecosts *AEC-Q101qualified

PDTB123TT

NPN 500 mA, 50 V resistor-equipped transistors; R1 = 2.2 kΩ, R2 = open

Features *Built-inbiasresistors *Simplifiescircuitdesign *500mAoutputcurrentcapability *Reducescomponentcount *Reducespickandplacecosts

PDTB123TT

PNP 500 mA, 50 V resistor-equipped transistor; R1 = 2.2 kOhm, R2 = open; ? 500 mA output current capability\n? Reduces component count\n? Built-in bias resistor\n? Reduces pick and place costs\n? Simplifies circuit design\n? AEC-Q101 qualified\n;

500 mA PNP Resistor-Equipped Transistor (RET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package.\n NPN complement: PDTD123TT.\n

PDTB123TK

PNP 500 mA, 50 V resistor-equipped transistors; R1 = 2.2 k廓, R2 = open

ETC

PDTB123TS

PNP 500 mA, 50 V resistor-equipped transistors; R1 = 2.2 k廓, R2 = open

ETC

PDTB123TT

PNP 500 mA, 50 V resistor-equipped transistors; R1 = 2.2 k廓, R2 = open

ETC

PDTB123TT,215

Package：TO-236-3，SC-59，SOT-23-3；包裝：卷帶（TR） 類別：分立半導(dǎo)體產(chǎn)品 晶體管 - 雙極（BJT）- 單，預(yù)偏置 描述：TRANS PREBIAS PNP 250MW TO236AB

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