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PD20015STR-E中文資料意法半導(dǎo)體數(shù)據(jù)手冊(cè)PDF規(guī)格書
| 廠商型號(hào) |
PD20015STR-E |
| 功能描述 | RF power transistor, LdmoST family |
| 文件大小 |
352.27 Kbytes |
| 頁(yè)面數(shù)量 |
16 頁(yè) |
| 生產(chǎn)廠商 | STMICROELECTRONICS |
| 中文名稱 | 意法半導(dǎo)體 |
| 網(wǎng)址 | |
| 數(shù)據(jù)手冊(cè) | |
| 更新時(shí)間 | 2025-9-9 17:04:00 |
| 人工找貨 | PD20015STR-E價(jià)格和庫(kù)存，歡迎聯(lián)系客服免費(fèi)人工找貨 |
PD20015STR-E規(guī)格書詳情
描述 Description
The PD20015-E is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 13.6 V in common source mode at frequencies of up to 1 GHz. PD20015-E boasts the excellent gain, linearity and reliability of ST’s latest LDMOS technology mounted in the first true SMD plastic RF power package, PowerSO-10RF. PD20015-E’s superior linearity performance makes it an ideal solution for mobile radio applications.
The PowerSO-10 plastic package, designed to offer high reliability, is the first ST JEDEC approved, high power SMD package. It has been specially optimized for RF needs and offers excellent RF performances and ease of assembly.
特性 Features
■ Excellent thermal stability
■ Common source configuration
■ POUT = 15 W with 11 dB gain @ 2 GHz / 13.6 V
■ Plastic package
■ ESD protection
■ In compliance with the 2002/95/EC European directive
產(chǎn)品屬性
- 型號(hào)：
PD20015STR-E
- 制造商：
STMICROELECTRONICS
- 制造商全稱：
STMicroelectronics
- 功能描述：
RF power transistor, LdmoST family
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