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PBSS4041PX

60 V, 5 A PNP low VCEsat transistor

Generaldescription PNPlowVCEsatBreakthroughInSmallSignal(BISS)transistorinamediumpowerandflatleadSOT89(SC-62)Surface-MountedDevice(SMD)plasticpackage. NPNcomplement:PBSS4041NX. Featuresandbenefits ■Verylowcollector-emittersaturationvoltageVCEsat ■Highcollect

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PBSS4041PX

絲印：6G；Package：SC-62；60 V, 5 A PNP low VCEsat (BISS) transistor

Featuresandbenefits *Verylowcollector-emittersaturationvoltageVCEsat *HighcollectorcurrentcapabilityICandICM *Highcollectorcurrentgain(hFE)athighIC *Highenergyefficiencyduetolessheatgeneration *AEC-Q101qualified *SmallerrequiredPrinted-CircuitBoard(PCB)

PBSS4041PX

60 V, 5 A PNP low VCEsat (BISS) transistor; ? Very low collector-emitter saturation voltage VCEsat\n? High collector current capability IC and ICM\n? High collector current gain (hFE) at high IC\n? High energy efficiency due to less heat generation\n? AEC-Q101 qualified\n? Smaller required Printed-Circuit Board (PCB) area than for conventional transistors\n;

NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power and flat lead SOT89 (SC-62) Surface-Mounted Device (SMD) plastic package.\n PNP complement: PBSS4041NX.\n

PBSS4041PX-Q

60 V, 5 A PNP low VCEsat transistor;

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PBSS4041PX_15

60 V, 5 A PNP low VCEsat (BISS) transistor

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PBSS4041PX,115

Package：TO-243AA；包裝：卷帶（TR）剪切帶（CT）Digi-Reel? 得捷定制卷帶 類別：分立半導(dǎo)體產(chǎn)品 晶體管 - 雙極性晶體管（BJT）- 單個 描述：TRANS PNP 60V 5A SOT89

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