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PBSS4041PX-Q

60 V, 5 A PNP low VCEsat transistor;

訪客結(jié)賬MyNexperia用戶結(jié)賬

NexperiaNexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

PBSS4041PZ

60V,5.7APNPlowVCEsat(BISS)transistor

Generaldescription PNPlowVCEsatBreakthroughInSmallSignal(BISS)transistorinaSOT223(SC-73)mediumpowerSurface-MountedDevice(SMD)plasticpackage. NPNcomplement:PBSS4041NZ. Featuresandbenefits ■Verylowcollector-emittersaturationvoltageVCEsat ■Highcollectorcurrentca

ETC

ETC

PBSS4041PZ

60V,5.7APNPlowVCEsat(BISS)transistor

Featuresandbenefits *Verylowcollector-emittersaturationvoltageVCEsat *HighcollectorcurrentcapabilityICandICM *Highcollectorcurrentgain(hFE)athighIC *Highenergyefficiencyduetolessheatgeneration *AEC-Q101qualified *SmallerrequiredPrinted-CircuitBoard(PCB)

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

PBSS4041PZ-Q

60V,5.7APNPlowVCEsattransistor

1.Generaldescription PNPlowVCEsattransistorinaSOT223(SC-73)mediumpowerSurface-MountedDevice(SMD) plasticpackage. NPNcomplement:PBSS4041NZ-Q 2.Featuresandbenefits ?Verylowcollector-emittersaturationvoltageVCEsat ?HighcollectorcurrentcapabilityICandICM ?Hig

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

PBSS4041PZ-Q

60V,5.7APNPlowVCEsattransistor

1.Generaldescription PNPlowVCEsattransistorinaSOT223(SC-73)mediumpowerSurface-MountedDevice(SMD) plasticpackage. NPNcomplement:PBSS4041NZ-Q 2.Featuresandbenefits ?Verylowcollector-emittersaturationvoltageVCEsat ?HighcollectorcurrentcapabilityICandICM ?Hig

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

PBSS4041SN

60V,6.7ANPN/NPNlowVCEsat(BISS)transistor

PHIPhilips Semiconductors

飛利浦荷蘭皇家飛利浦

PHI

PBSS4041SN

60V,6.7ANPN/NPNlowVCEsat(BISS)transistor

Featuresandbenefits *Verylowcollector-emittersaturationvoltageVCEsat *HighcollectorcurrentcapabilityICandICM *Highcollectorcurrentgain(hFE)athighIC *Highefficiencyduetolessheatgeneration *SmallerrequiredPrinted-CircuitBoard(PCB)areathanforconventionaltr

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

PBSS4041SP

60V,5.9APNP/PNPlowVCEsat(BISS)transistor

Generaldescription PNP/PNPlowVCEsatBreakthroughInSmallSignal(BISS)transistorinaSOT96-1(SO8)mediumpowerSurface-MountedDevice(SMD)plasticpackage. Featuresandbenefits ■Verylowcollector-emittersaturationvoltageVCEsat ■HighcollectorcurrentcapabilityICandICM ■Hig

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

PBSS4041SPN

60VNPN/PNPlowVCEsat(BISS)transistor

Generaldescription NPN/PNPlowVCEsatBreakthroughInSmallSignal(BISS)transistorinaSOT96-1(SO8)mediumpowerSurface-MountedDevice(SMD)plasticpackage. Featuresandbenefits ■Verylowcollector-emittersaturationvoltageVCEsat ■HighcollectorcurrentcapabilityICandICM ■Hig

ETC

ETC

PBSS4041SPN

60VNPN/PNPlowVCEsat(BISS)transistor

Featuresandbenefits *Verylowcollector-emittersaturationvoltageVCEsat *HighcollectorcurrentcapabilityICandICM *Highcollectorcurrentgain(hFE)athighIC *Highefficiencyduetolessheatgeneration *SmallerrequiredPrinted-CircuitBoard(PCB)areathanforconventionaltr

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

技術(shù)參數(shù)

  • Package name：

    SOT89

  • Size (mm)：

    4.5 x 2.5 x 1.5

  • Polarity：

    PNP

  • Ptot [max] (mW)：

    2500

  • VCEO [max] (V)：

    -60

  • IC [max] (A)：

    -5

  • ICM [max] (A)：

    -15

  • hFE [min]：

    200

  • hFE [typ]：

    300

  • fT [typ] (MHz)：

    110

  • VCEsat [max] (mV)：

    -300

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Nexperia
24+
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3000
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恩XP
2447
SOT-223
100500
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恩XP
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20094
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NEXPERIA/安世
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SOT-223-3
6000
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NEXPERIA/安世
23+
SOT223
50000
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NEXPERIA
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SOT223
50000
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NEXPERIA/安世
2022+
SOT-223
32500
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恩XP
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6000
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19+
SOT-223
1000
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更多PBSS4041PX-Q供應(yīng)商 更新時(shí)間2025-7-29 14:17:00

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