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PBHV8540X

500 V, 0.5 A NPN high-voltage low VCEsat (BISS) transistor; ? High voltage\n? Low collector-emitter saturation voltage VCEsat\n? High collector current capability IC and ICM\n? High collector current gain hFE at high IC\n? AEC-Q101 qualified\n;

NPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT89 (SC-62) medium power and flat lead Surface-Mounted Device (SMD) plastic package.\n PNP complement: PBHV9040X.\n

PBHV8540X

絲?。?a target="_blank" title="Marking" href="/4d/marking.html">4D；Package：SOT89；500 V, 0.5 A NPN high-voltage low VCEsat (BISS) transistor

PBHV8540X-Q

500 V, 0.5 A NPN high-voltage low VCEsat transistor; ? High voltage\n? Low collector-emitter saturation voltage VCEsat\n? High collector current capability IC and ICM\n? High collector current gain hFE at high IC\n? Qualified according to AEC-Q101 and recommended for use in automotive applications\n;

NPN high-voltage low VCEsat transistor in a SOT89 (SC-62) medium power and flat lead Surface-Mounted Device (SMD) plastic package.\n PNP complement: PBHV9040X\n

PBHV8540X,115

Package：TO-243AA；包裝：散裝 類別：分立半導(dǎo)體產(chǎn)品 晶體管 - 雙極性晶體管（BJT）- 單個 描述：TRANS NPN 400V 0.5A SOT89

Nexperia USA Inc.

PBHV8540Z

500V,0.5ANPNhigh-voltagelowVCEsat(BISS)transistor

Features *Highvoltage *Lowcollector-emittersaturationvoltageVCEsat *HighcollectorcurrentcapabilityICandICM *Highcollectorcurrentgain(hFE)athighIC *AEC-Q101qualified

PM-8540

10/100Base-TXISOLATIONTRANSFORMERSWITHFILTERS

RHD8540

RadHard-by-DesignRHD854064-ChannelAnalogMultiplexer32-ChannelKelvinMeasurementConfigured

RHD8540-S

RadHard-by-DesignRHD854064-ChannelAnalogMultiplexer32-ChannelKelvinMeasurementConfigured

S8540

STEP-DOWN,600kHzPWMCONTROLorPWM/PFMSWITCHABLESWITCHINGREGULATORCONTROLLER

S-8540

STEP-DOWN,600kHzPWMCONTROLorPWM/PFMSWITCHABLESWITCHINGREGULATORCONTROLLER