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PBHV8540Z

500 V, 0.5 A NPN high-voltage low VCEsat(BISS) transistor

Generaldescription NPNhigh-voltagelowVCEsatBreakthroughInSmallSignal(BISS)transistorinaSOT223(SC-73)mediumpowerSurface-MountedDevice(SMD)plasticpackage. Features ■Highvoltage ■Lowcollector-emittersaturationvoltageVCEsat ■HighcollectorcurrentcapabilityICandIC

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PBHV8540Z

絲?。?a target="_blank" title="Marking" href="/v8540z/marking.html">V8540Z；Package：SC-73；500 V, 0.5 A NPN high-voltage low VCEsat (BISS) transistor

Features *Highvoltage *Lowcollector-emittersaturationvoltageVCEsat *HighcollectorcurrentcapabilityICandICM *Highcollectorcurrentgain(hFE)athighIC *AEC-Q101qualified

PBHV8540Z

500 V, 0.5 A NPN high-voltage low VCEsat (BISS) transistor; ? High voltage\n? Low collector-emitter saturation voltage VCEsat\n? High collector current capability IC and ICM\n? High collector current gain (hFE) at high IC\n? AEC-Q101 qualified\n;

NPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) medium power Surface-Mounted Device (SMD) plastic package. PNP complement: PBHV9040Z.\n

PBHV8540Z

500 V, 0.5 A NPN high-voltage low VCEsat(BISS) transistor;

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PBHV8540Z-Q

500 V, 0.5 A NPN high-voltage low VCEsat transistor; ? High voltage\n? Low collector-emitter saturation voltage VCEsat\n? High collector current capability IC and ICM\n? High collector current gain (hFE) at high IC\n? Qualified according to AEC-Q101 and recommended for use in automotive applications\n;

NPN high-voltage low VCEsat transistor in a SOT223 (SC-73) medium power Surface-Mounted Device (SMD) plastic package.\n PNP complement: PBHV9040Z-Q\n

PBHV8540Z,115

Package：TO-261-4，TO-261AA；包裝：卷帶（TR）剪切帶（CT）Digi-Reel? 得捷定制卷帶 類別：分立半導(dǎo)體產(chǎn)品 晶體管 - 雙極性晶體管（BJT）- 單個 描述：TRANS NPN 400V 0.5A SOT223

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