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PBHV8215Z

Marking：PBHV8215Z；Package：SC-73；150 V, 2 A NPN high-voltage low VCEsat (BISS) transistor

Generaldescription NPNhigh-voltagelowVCEsatBreakthroughInSmallSignal(BISS)transistorinamediumpowerSOT223(SC-73)Surface-MountedDevice(SMD)plasticpackage. PNPcomplement:PBHV9215Z. Features ■Highvoltage ■Lowcollector-emittersaturationvoltageVCEsat ■Highcollector

PBQ79718B1PAPRQ1

Marking：PBQ79718B1；Package：HTQFP；BQ79718-Q1 Functional Safety-Compliant Automotive 18S Battery Monitor

1Features ?AEC-Q100qualifiedwith–40°Cto+125°Cambient temperaturerange ?FunctionalSafetyComplianttargeted –DocumentationtoaidISO26262systemdesign –SystematiccapabilityuptoASILDtargeted –HardwarecapabilityuptoASILDtargeted ?Measure9-18batteriesinseriesp

PBQ79731PHPTQ1

Marking：PBQ79731A0；Package：HTQFP；BQ79731-Q1 UIR Sensor with Voltage, Current and Insulation Resistance Monitoring in EV/BMS HV Automotive Applications

1Features ?AEC-Q100qualified–40°Cto+125°C ?Functionalsafety-complianttargeted –DocumentationtoaidISO26262systemdesign –SystematiccapabilityuptoASILDtargeted –HardwarecapabilityuptoASILDtargeted ?17single-endedvoltagechannels –Highvoltagepack,link,cha

PBSS2540MB

Marking：PBSS2540MB；Package：DFN1006B-3；40 V, 0.5 A NPN low VCEsat (BISS) transistor

Generaldescription NPNlowVCEsatBreakthroughInSmallSignal(BISS)transistorinaleadlessultrasmallDFN1006B-3(SOT883B)Surface-MountedDevice(SMD)plasticpackage. PNPcomplement:PBSS3540MB. Featuresandbenefits ■LeadlessultrasmallSMDplastic package ■Lowpackageheight

PBSS3540MB

Marking：PBSS3540MB；Package：SOT883B；40 V, 0.5 A PNP low VCEsat (BISS) transistor

Generaldescription PNPlowVCEsatBreakthroughInSmallSignal(BISS)transistorinaleadlessultrasmallSOT883BSurface-MountedDevice(SMD)plasticpackage. NPNcomplement:PBSS2540MB. Featuresandbenefits ■LeadlessultrasmallSMDplastic package ■Lowpackageheightof0.37mm ■

PBSS4021NZ-Q

Marking：PB4021NZ；Package：SC-73；20 V, 8 A NPN low VCEsat transistor

1.Generaldescription NPNlowVCEsattransistorinaSOT223(SC-73)mediumpowerSurface-MountedDevice(SMD) plasticpackage. PNPcomplement:PBSS4021PZ-Q 2.Featuresandbenefits ?Verylowcollector-emittersaturationvoltageVCEsat ?HighcollectorcurrentcapabilityICandICM ?Hig

PBSS4021PZ

Marking：PB4021PZ；Package：SC-73；20 V, 6.6 A PNP low VCEsat (BISS) transistor

Featuresandbenefits *Verylowcollector-emittersaturationvoltageVCEsat *HighcollectorcurrentcapabilityICandICM *Highcollectorcurrentgain(hFE)athighIC *Highenergyefficiencyduetolessheatgeneration *AEC-Q101qualified *SmallerrequiredPrinted-CircuitBoard(PCB)

PBSS4021PZ-Q

Marking：PB4021PZ；Package：SOT223；20 V, 6.6 A PNP low VCEsat transistor

1.Generaldescription PNPlowVCEsattransistorinaSOT223(SC-73)mediumpowerSurface-MountedDevice(SMD) plasticpackage. NPNcomplement:PBSS4021NZ-Q 2.Featuresandbenefits ?Verylowcollector-emittersaturationvoltageVCEsat ?HighcollectorcurrentcapabilityICandICM ?Hig

PBSS4032NZ

Marking：PB4032NZ；Package：SC-73；30 V, 4.9 A NPN low VCEsat (BISS) transistor

Featuresandbenefits *Lowcollector-emittersaturationvoltageVCEsat *Optimizedswitchingtime *HighcollectorcurrentcapabilityICandICM *Highcollectorcurrentgain(hFE)athighIC *Highenergyefficiencyduetolessheatgeneration *AEC-Q101qualified *SmallerrequiredPrint

PBSS4032NZ-Q

Marking：PB4032NZ；Package：SOT223；30 V, 4.9 A NPN low VCEsat transistor

1.Generaldescription NPNlowVCEsattransistorinamediumpowerSOT223(SC-73)Surface-MountedDevice(SMD) plasticpackage. PNPcomplement:PBSS4032PZ-Q 2.Featuresandbenefits ?Lowcollector-emittersaturationvoltageVCEsat ?Optimizedswitchingtime ?Highcollectorcurrentcapabi