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P10NK80Z

型號(hào)：STP10NK80Z；Package：TO-220；N-CHANNEL 800V - 0.78ohm - 9A TO-220/TO-220FP/TO-247 Zener-Protected SuperMESH??ower MOSFET

Description TheSuperMESH?seriesisobtainedthroughanextremeoptimizationofST’swellestablished strip-basedPowerMESH?layout.Inadditiontopushingon-resistancesignificantlydown,special careistakentoensureaverygooddv/dtcapabilityforthemostdemandingapplications.

P10NK80Z

型號(hào)：STP10NK80Z；Package：TO-220；N-channel 800 V, 0.78 Ω, 9 A Zener-protected SuperMESH? Power MOSFETs in TO-220, TO-220FP and TO-247 packages

Description ThesedevicesareN-channelZener-protected PowerMOSFETsdevelopedusing STMicroelectronics'SuperMESH?technology, achievedthroughoptimizationofST'swell establishedstrip-basedPowerMESH?layout.In additiontoasignificantreductioninonresistance,thisdeviceisdesign

P10NK80ZFP

型號(hào)：STP10NK80ZFP；Package：TO-220FP；N-CHANNEL 800V - 0.78ohm - 9A TO-220/TO-220FP/TO-247 Zener-Protected SuperMESH??ower MOSFET

Description TheSuperMESH?seriesisobtainedthroughanextremeoptimizationofST’swellestablished strip-basedPowerMESH?layout.Inadditiontopushingon-resistancesignificantlydown,special careistakentoensureaverygooddv/dtcapabilityforthemostdemandingapplications.

P10NK80ZFP

型號(hào)：STP10NK80ZFP；Package：TO-220FP；N-channel 800 V, 0.78 Ω, 9 A Zener-protected SuperMESH? Power MOSFETs in TO-220, TO-220FP and TO-247 packages

Description ThesedevicesareN-channelZener-protected PowerMOSFETsdevelopedusing STMicroelectronics'SuperMESH?technology, achievedthroughoptimizationofST'swell establishedstrip-basedPowerMESH?layout.In additiontoasignificantreductioninonresistance,thisdeviceisdesign

P11NM80

型號(hào)：STP11NM80；Package：TO-220；N-channel 800 V, 0.35 Ω, 11 A MDmesh? Power MOSFET in D2PAK, TO-220FP, I2PAK, TO-220, TO-247

Features ■Lowinputcapacitanceandgatecharge ■Lowgateinputresistance ■BestRDS(on)*Qgintheindustry Applications ■Switchingapplications Description TheseN-channelPowerMOSFETsare developedusingSTMicroelectronics' revolutionaryMDmesh?technology,which associatesth

P12NM50

型號(hào)：STP12NM50；Package：TO-220；N-CHANNEL 500V - 0.3W - 12A TO-220/TO-220FP/I PAK MDmesh]Power MOSFET

Description TheMDmesh?isanewrevolutionaryMOSFETtechnologythatassociatestheMultipleDrainprocesswiththeCompany’sPowerMESH?horizontallayout.Theresultingproducthasanoutstandinglowon-resistance,impressivelyhighdv/dtandexcellentavalanchecharacteristics.Theadoptionof

P12NM50FP

型號(hào)：STP12NM50FP；Package：TO-220FP；N-CHANNEL 500V - 0.3W - 12A TO-220/TO-220FP/I PAK MDmesh]Power MOSFET

Description TheMDmesh?isanewrevolutionaryMOSFETtechnologythatassociatestheMultipleDrainprocesswiththeCompany’sPowerMESH?horizontallayout.Theresultingproducthasanoutstandinglowon-resistance,impressivelyhighdv/dtandexcellentavalanchecharacteristics.Theadoptionof

P1806

型號(hào)：STP1806；Package：TO-220；N-CHANNEL 60V - 0.015
- 50A TO-220 STripFET? POWER MOSFET

■TYPICALRDS(on)=0.015 ■EXCEPTIONALdv/dtCAPABILITY ■100AVALANCHETESTED DESCRIPTION ThisPowerMOSFETisthelatestdevelopmentof STMicroelectronisuniqueSingleFeatureSize? strip-basedprocess.Theresultingtransistor showsextremelyhighpackingdensityforlowonresistance

P10N60CAFJ

型號(hào)：SVFP10N60CAFJ；Package：TO-220FJ-3L；10A, 600V N-CHANNEL MOSFET

GENERALDESCRIPTION SVFP10N60CAFJ/FJHisanN-channelenhancementmodepower MOSfieldeffecttransistorwhichisproducedusingSilanproprietary F-CellTMhigh-voltageplanarVDMOStechnology.Theimproved processandcellstructurehavebeenespeciallytailoredtominimize on-stateresistan

P10N60CAFJ

型號(hào)：SVFP10N60CAFJ；Package：TO-220FJ-3L；10A, 600V N-CHANNEL MOSFET

GENERALDESCRIPTION SVFP10N60CAFJ/FJHisanN-channelenhancementmodepower MOSfieldeffecttransistorwhichisproducedusingSilanproprietary F-CellTMhigh-voltageplanarVDMOStechnology.Theimproved processandcellstructurehavebeenespeciallytailoredtominimize on-stateresistan