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型號：2N2222AU；Package：SOT-323；General Purpose Transistor

GeneralPurposeTransistor NPNSilicon Thesetransistorsaredesignedforgeneralpurposeamplifierapplications.TheyarehousedintheSC-323/SC?70packagewhichisdesignedforlowpowersurfacemountapplications. Features ?WedeclarethatthematerialofproductcompliancewithRoHSrequ

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型號：74AUP2G241GN；Package：SOT1116；Low-power dual buffer/line driver; 3-state

1.Generaldescription The74AUP2G241providesadualnon-invertingbuffer/linedriverwith3-stateoutputs.The3-state outputsarecontrolledbytheoutputenableinputs1OEand2OE.AHIGHlevelatpin1OEcauses output1Ytoassumeahigh-impedanceOFF-state.ALOWlevelatpin2OEcauseso

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型號：74AUP2G241GS；Package：SOT1203；Low-power dual buffer/line driver; 3-state

1.Generaldescription The74AUP2G241providesadualnon-invertingbuffer/linedriverwith3-stateoutputs.The3-state outputsarecontrolledbytheoutputenableinputs1OEand2OE.AHIGHlevelatpin1OEcauses output1Ytoassumeahigh-impedanceOFF-state.ALOWlevelatpin2OEcauseso

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型號：BFG21W；Package：SOT-343R；UHF power transistor

DESCRIPTION NPNdoublepolysiliconbipolarpowertransistorwithburiedlayerforlowvoltagemediumpowerapplicationsencapsulatedinaplastic,4-pindual-emitterSOT343Rpackage. FEATURES ?Highpowergain ?Highefficiency ?1.9GHzoperatingarea ?Linearandnon-linearoperation. APP

PHI

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型號：BFG21W；Package：SOT-343R；RF Manual 16th edition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

ETC

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型號：ESD05V10D-LC；Package：DFN-10-4.1x2x0.5-0.8；Transient Voltage Suppressors for ESD Protection

Features 125WattsPeakPulsePowerperLine(tp=8/20μs) ProtectstwoorfourI/Olines Lowcapacitance:0.2pFtypical(I/OtoI/O) Lowoperatingvoltage:5V RoHSCompliant IEC61000-4-2(ESD)±15kV(air),±8kV(contact) IEC61000-4-4(EFT)40A(5/50ηs) IEC61000-4-5(Lightning)5A(8/20μs)

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型號：FCX591；Package：SOT-89；PNP Silicon Planar Medium Power High Perormance Transistor

FEATURES ●Complementarytype:FCX491.

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型號：FCX591；Package：SOT-89-3L；SOT-89-3L Plastic-Encapsulate Transistors

FEATURES Powerdissipation

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型號：FCX591；Package：SOT-89；PNP Transistors

■Features ●CollectorCurrentCapabilityIC=-1A ●CollectorEmitterVoltageVCEO=-60V

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型號：FMP1；Package：SMD5；Switching diode

Features Highreliability Smallmoldtype HighSpeedswitching Application Highspeedswitching