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UPA814

NPNSILICONEPITAXIALTRANSISTORWITHBUILT-IN2x2SC5195FLAT-LEAD6-PINTHIN-TYPEULTRASUPERMINIMOLD

FEATURES ?Lowvoltageoperation,lowphasedistortion ?Lownoise:NF=1.5dBTYP.@VCE=3V,IC=7mA,f=2GHz NF=1.7dBTYP.@VCE=1V,IC=3mA,f=2GHz ?Flat-lead6-pinthin-typeultrasuperminimoldpackage. ?Built-in2transistors(2×2SC5195)

UPA814T

SILICONTRANSISTOR

MICROWAVELOWNOISEAMPLIFIER NPNSILICONEPITAXIALTRANSISTOR (WITHBUILT-IN2′2SC5193)SMALLMINIMOLD FEATURES ?LowVoltageOperation,LowPhaseDistortion ?LowNoise NF=1.5dBTYP.@VCE=3V,IC=7mA,f=2GHz NF=1.7dBTYP.@VCE=1V,IC=3mA,f=2GHz ?LargeAbsolu

UPA814T

NPNSILICONHIGHFREQUENCYTRANSISTOR

UPA814TC

NPNSILICONEPITAXIALTRANSISTORWITHBUILT-IN2x2SC5195FLAT-LEAD6-PINTHIN-TYPEULTRASUPERMINIMOLD

FEATURES ?Lowvoltageoperation,lowphasedistortion ?Lownoise:NF=1.5dBTYP.@VCE=3V,IC=7mA,f=2GHz NF=1.7dBTYP.@VCE=1V,IC=3mA,f=2GHz ?Flat-lead6-pinthin-typeultrasuperminimoldpackage. ?Built-in2transistors(2×2SC5195)

UPA814TF

NPNSILICONHIGHFREQUENCYTRANSISTOR

DESCRIPTION TheUPA814TFcontainstwoNE688NPNhighfrequencysiliconbipolarchips.NECsnewlowprofileTFpackageisidealforallportablewirelessapplicatonswherereducingcomponentheightisaprimeconsideration.Eachtransistorchipisindependentlymountedandeasilyconfiguredfortw

UPC814

BIPOLARANALOGINTEGRATEDCIRCUIT

SEMICONDUCTORSELECTIONGUIDE Microcomputer ICMemory Semi-CustomIC ParticularPurposeIC GeneralPurposeLinearIC Transistor/Diode/Thyristor MicrowaveDevice/ConsumerUseHighFrequencyDevice OpticalDevice Packages Index(QuickReferencebyTypeN

UPC814C

BIPOLARANALOGINTEGRATEDCIRCUIT

SEMICONDUCTORSELECTIONGUIDE Microcomputer ICMemory Semi-CustomIC ParticularPurposeIC GeneralPurposeLinearIC Transistor/Diode/Thyristor MicrowaveDevice/ConsumerUseHighFrequencyDevice OpticalDevice Packages Index(QuickReferencebyTypeN

UZ814

POWERZENERS3WATT

YHC814N

SMDPowerInductor