描述 Description

The NXH80B120L2Q0SG is a power module containing a dual boost stage consisting of two 40A/1200V IGBTs, two 15A/1200V SiC diodes,and two 25A/1600V anti-parallel diodes for the IGBTs. Two additional 25A/1600V bypass rectifiers used for inrush current limit are included. An on-board thermistor is included.

特性 Features

? IGBT Specifications: VCE(SAT) = 2.2 V, ESW = 2180 \u0002uJ
? Fast IGBT with low VCE(SAT) for high efficiency
? 25 A / 1600 V Bypass and Anti?parallel Diodes
? Low VF bypass diodes for excellent efficiency in bypass mode
? SiC Rectifier Specification: VF = 1.4 V
? SiC Diode for high speed switching
? Solderable Pins
? Easy mounting
? Dual Boost 40 A / 1200 V IGBT + SiC Rectifier Hybrid Module
? Thermistor

應(yīng)用 Application

? Solar Inverter Boost Stage
? Solar Inverter
? UPS

簡介

NXH80B120H2Q0SG屬于分立半導(dǎo)體產(chǎn)品的晶體管-IGBT-模塊。由制造生產(chǎn)的NXH80B120H2Q0SG晶體管 - IGBT - 模塊絕緣柵雙極晶體管 (IGBT) 是三端功率半導(dǎo)體器件，主要用作電子開關(guān)，兼具高效率和快速切換優(yōu)點(diǎn)。作為模塊，IGBT 配置為非對稱式橋； 升壓、降壓和制動斬波器；全橋、三電平和三相逆變器。有些器件內(nèi)置了用于監(jiān)控溫度的 NTC 熱敏電阻。IGBT 模塊可根據(jù)最大功率、集電極電流、集射擊穿電壓和配置進(jìn)行區(qū)分。