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NVH4L022N120M3S

絲?。?a target="_blank" title="Marking" href="/h4l022120m3s/marking.html">H4L022120m3s；Package：TO247-4L；MOSFET - SiC Power, Single N-Channel, TO247-4L 1200 V, 22 m, 68 A

Features ?Typ.RDS(on)=22m@VGS=18V ?UltraLowGateCharge(QG(tot)=151nC) ?HighSpeedSwitchingwithLowCapacitance(Coss=244pF) ?100AvalancheTested ?AEC?Q101QualifiedandPPAPCapable ?TheseDevicesareRoHSCompliant TypicalApplications ?AutomotiveOnBoardC

NVH4L022N120M3S

Silicon Carbide (SiC) MOSFET – 22 mohm, 1200V, M3S, TO-247-4

Features ?Typ.RDS(on)=22m@VGS=18V ?UltraLowGateCharge(QG(tot)=151nC) ?HighSpeedSwitchingwithLowCapacitance(Coss=244pF) ?100AvalancheTested ?AEC?Q101QualifiedandPPAPCapable ?ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb?Free2LI(on

NVH4L022N120M3S

Silicon Carbide (SiC) MOSFET - EliteSiC, 22 mohm, 1200 V, M3S, TO247-4L; ? Max RDS(on) = 30mΩ at Vgs =18V, Id = 60A\n? Typical RDS(on) = 22mΩ\n? Qualified for Automotive According to AEC?Q101\n? Automotive Grade\n? 15V to 18V Gate Drive\n? Devices are Pb?Free and are RoHS Compliant\n? New M3S technology: 22mohm RDS(ON) with low EON and EOFF losses\n;

Silicon Carbide (SiC) MOSFET uses a completely new technology thatprovidesuperiorswitching performanceandhigherreliability compared to Silicon. In addition, the low ON resistance and compact chipsizeensurelowcapacitanceandgatecharge.Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.

NVH4L022N120M3S_V01

Silicon Carbide (SiC) MOSFET – 22 mohm, 1200V, M3S, TO-247-4

Features ?Typ.RDS(on)=22m@VGS=18V ?UltraLowGateCharge(QG(tot)=151nC) ?HighSpeedSwitchingwithLowCapacitance(Coss=244pF) ?100AvalancheTested ?AEC?Q101QualifiedandPPAPCapable ?ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb?Free2LI(on

NTH4L022N120M3S

SiliconCarbide(SiC)MOSFET–EliteSiC,22mohm,1200V,M3,TO-247-4L

Features ?Typ.RDS(on)=22m@VGS=18V ?LowSwitchingLosses(Typ.EON490Jat40A,800V) ?100AvalancheTested ?ThisDeviceisHalideFreeandRoHSCompliantwithExemption7a, Pb?Free2LI(onSecondLevelInterconnection) TypicalApplications ?SolarInverters ?ElectricV

NTH4L022N120M3S

MOSFET-SiCPower,SingleN-Channel,TO247-4L1200V,22m,68A