描述 Description

This digital transistor is designed to replace a single device and its external resistor bias network. The bipolar digital transistor contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. This eliminates these individual components by integrating them into a single device and can reduce both system cost and board space.

特性 Features

? Collector-Emitter Sustaining Voltage - VCEO(sus) = 30 Vdc (Min) @ IC = 10 mAdc
? High DC Current Gain -hFE = 125 (Min) @ IC = 0.8 Adc= 90 (Min) @ IC = 3.0 Adc
? Low Collector-Emitter Saturation Voltage - VCE(sat) = 0.275 Vdc (Max) @ IC = 1.2 Adc= 0.55 Vdc (Max) @ IC = 3.0 Adc
? SOT-223 Surface Mount Packaging
? ESD Rating - Human Body Model: Class 1B - Machine Model: Class B
? Pb-Free Package is Available
? NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AECQ101Qualified and PPAP Capable

簡(jiǎn)介

NSB9435屬于分立半導(dǎo)體產(chǎn)品的晶體管-雙極（BJT）-單預(yù)偏置。由制造生產(chǎn)的NSB9435晶體管 - 雙極（BJT）- 單，預(yù)偏置預(yù)偏置雙極晶體管具有內(nèi)部電阻器，設(shè)計(jì)用于在未施加輸入信號(hào)的情況下將器件保持在偏置或工作點(diǎn)附近。晶體管偏置可使晶體管更有效地工作，并產(chǎn)生穩(wěn)定、無(wú)失真的輸出信號(hào)。預(yù)偏置晶體管減少了所需的外部電路元器件數(shù)量，從而可降低項(xiàng)目成本。