首頁 >NP50P06KDG>規(guī)格書列表
零件型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
---|---|---|---|---|
NP50P06KDG | MOS FIELD EFFECT TRANSISTOR DESCRIPTION TheNP50P06KDGisP-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance RDS(on)1=17mΩMAX.(VGS=?10V,ID=?25A) RDS(on)2=23mΩMAX.(VGS=?4.5V,ID=?25A) ?Lowinputcapacitance | NECRenesas Electronics America 瑞薩日本瑞薩電子株式會社 | NEC | |
NP50P06KDG | -60V – -50A – P-channel Power MOS FET Application : Automotive Description ThisproductisP-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features ?Superlowon-stateresistance:RDS(on)=17m?Max.(VGS=-10V,ID=-25A) RDS(on)=23m?Max.(VGS=-4.5V,ID=-25A) ?Lowinputcapacitance:Ciss=50 | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | |
NP50P06KDG | Power MOSFETs for Automotive The NP50P06KDG is P-channel MOS Field Effect Transistor designed for high current switching applications.; ? Super low on-state resistance RDS(on)1 = 17 mΩ MAX. (VGS = ?10 V, ID = ?25 A) RDS(on)2 = 23 mΩ MAX. (VGS = ?4.5 V, ID = ?25 A)\n? Low input capacitance Ciss = 5000 pF TYP.\n; | RenesasRenesas Technology Corp 瑞薩瑞薩科技有限公司 | Renesas | |
MOS FIELD EFFECT TRANSISTOR DESCRIPTION TheNP50P06KDGisP-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance RDS(on)1=17mΩMAX.(VGS=?10V,ID=?25A) RDS(on)2=23mΩMAX.(VGS=?4.5V,ID=?25A) ?Lowinputcapacitance | NECRenesas Electronics America 瑞薩日本瑞薩電子株式會社 | NEC | ||
-60V – -50A – P-channel Power MOS FET Application : Automotive Description ThisproductisP-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features ?Superlowon-stateresistance:RDS(on)=17m?Max.(VGS=-10V,ID=-25A) RDS(on)=23m?Max.(VGS=-4.5V,ID=-25A) ?Lowinputcapacitance:Ciss=50 | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
MOS FIELD EFFECT TRANSISTOR DESCRIPTION TheNP50P06KDGisP-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance RDS(on)1=17mΩMAX.(VGS=?10V,ID=?25A) RDS(on)2=23mΩMAX.(VGS=?4.5V,ID=?25A) ?Lowinputcapacitance | NECRenesas Electronics America 瑞薩日本瑞薩電子株式會社 | NEC | ||
SWITCHING P-CHANNEL POWER MOS FET | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
SWITCHING P-CHANNEL POWER MOS FET | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
SWITCHING P-CHANNEL POWER MOS FET | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS |
技術(shù)參數(shù)
- Channels (#):
1
- Pkg. Type:
MP-25ZK
- Standard Pkg. Type:
TO-263 / D2PAK
- VDSS (Max) (V):
-60
- ID (A):
-50
- RDS (ON)(Max) @10V or 8V (mohm):
17
- RDS (ON) (Max) @ 4V or 4.5V or 5V (m ohm):
23
- Pch (W):
90
- VGSS:
20
- Vgs (off) (Max) (V):
-2.5
- RDS (ON) (Typical) @ 10V / 8V (mohm):
13.5
- Ciss (Typical) (pF):
5000
- QG (nC) typ (nC):
95
- Mounting Type:
Surface Mount
- Series Name:
NP Series
供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
NEC |
24+ |
TO-263 |
503169 |
免費送樣原盒原包現(xiàn)貨一手渠道聯(lián)系 |
詢價 | ||
NEC |
24+ |
TO-252 |
8866 |
詢價 | |||
NEC |
1415+ |
TO-252 |
28500 |
全新原裝正品,優(yōu)勢熱賣 |
詢價 | ||
RENESAS |
24+ |
TO-263 |
5000 |
只做原裝公司現(xiàn)貨 |
詢價 | ||
NEC |
23+ |
TO-263 |
8560 |
受權(quán)代理!全新原裝現(xiàn)貨特價熱賣! |
詢價 | ||
NEC |
18+ |
TO-252 |
85600 |
保證進口原裝可開17%增值稅發(fā)票 |
詢價 | ||
Renesas |
1822+ |
TO-263 |
9852 |
只做原裝正品假一賠十為客戶做到零風險!! |
詢價 | ||
NEC |
6000 |
面議 |
19 |
TO-252 |
詢價 | ||
Renesas |
18+ |
TO-263 |
41200 |
原裝正品,現(xiàn)貨特價 |
詢價 | ||
NEXPERIA/安世 |
23+ |
SOT109-1 |
69820 |
終端可以免費供樣,支持BOM配單! |
詢價 |
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