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首頁(yè)>NEM091603P-28-A>規(guī)格書詳情

NEM091603P-28-A中文資料瑞薩數(shù)據(jù)手冊(cè)PDF規(guī)格書

NEM091603P-28-A
廠商型號(hào)

NEM091603P-28-A

功能描述

LDMOS FIELD EFFECT TRANSISTOR

文件大小

306.04 Kbytes

頁(yè)面數(shù)量

11 頁(yè)

生產(chǎn)廠商

RENESAS

中文名稱

瑞薩

網(wǎng)址

網(wǎng)址

數(shù)據(jù)手冊(cè)

下載地址一下載地址二到原廠下載

更新時(shí)間

2025-9-5 19:10:00

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NEM091603P-28-A規(guī)格書詳情

N-CHANNEL SILICON POWER LDMOS FET

FOR 160 W UHF-BAND SINGLE-END POWER AMPLIFIER

DESCRIPTION

The NEM091603P-28 is an N-channel enhancement-mode lateral diffused MOS FET designed for 800 to 1 000

MHz applications, such as, GSM/EDGE/N-CDMA/W-CDMA/cdma2000 cellular base station. Dies are manufactured

using our NEWMOS technology (our WSi gate lateral MOS FET), and its nitride surface passivation and multi layer

aluminum silicon metallization offer a high degree of reliability.

FEATURES

? High 1 dB compression output power : PO (1 dB) = 160 W TYP. (VDS = 28 V, IDset = 1 200 mA,

f = 860 to 880 MHz CW)

? High linear gain : GL = 19.5 dB TYP. (VDS = 28 V, IDset = 1 200 mA, f = 860 to 880 MHz CW)

? High drain efficiency : ηd = 60 TYP. (VDS = 28 V, IDset = 1 200 mA, f = 860 to 880 MHz CW)

? Low intermodulation distortion : IM3 = ?40 dBc TYP. (VDS = 28 V, IDset = 1 200 mA, f = 880/880.1 MHz,

Pout = 46.5 dBm (2 tones) )

: IM3 = ?40 dBc TYP. (VDS = 28 V, IDset = 1 200 mA, f = 960/960.1 MHz,

Pout = 46.0 dBm (2 tones) )

? Internal matched (Input and Output) for ease of use

? Low cost hollow plastic packages

? 100 screening

? Integrated ESD protection

? Effective prevention against humidity

? Excellent stability against HCI (Hot Carrier Injection)

APPLICATION

? Digital cellular base station PA : GSM/EDGE/N-CDMA/W-CDMA/cdma2000 etc.

供應(yīng)商 型號(hào) 品牌 批號(hào) 封裝 庫(kù)存 備注 價(jià)格
NANO
24+
NA
990000
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CHINAXYJ
23+
3225
9868
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TOS
23+
65480
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NIC
220
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NEC
23+
TO-59
8510
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N/A
DIP-3
35560
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ITT CANNON
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SOP
6540
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NEC
24+
10
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ADAM-TECH
23+
原廠原包
19960
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KGS
2447
SMD
100500
一級(jí)代理專營(yíng)品牌!原裝正品,優(yōu)勢(shì)現(xiàn)貨,長(zhǎng)期排單到貨
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