N-CHANNEL SILICON POWER MOS FET

FOR UHF-BAND POWER AMPLIFIER

DESCRIPTION

The NEM090303M-28 is an N-channel enhancement-mode lateral MOS FET designed for driver stage in 0.5 to

1.0 GHz PA, such as, analog/digital TV-transmitter and GSM/D-AMPS/PDC cellular base station amplifiers. Dies are

manufactured using our NEWMOS technology (our WSi gate lateral MOS FET), and its nitride surface passivation

and triple layer aluminum silicon metalization offer a high degree of reliability.

FEATURES

? High 1 dB compression output power : PO (1 dB) = 40 W TYP. (VDS = 28 V, IDset = 250 mA, f = 960 MHz)

? High linear gain : GL = 20.0 dB TYP. (VDS = 28 V, IDset = 250 mA, f = 960 MHz)

? High drain efficiency : hd = 63 TYP. (VDS = 28 V, IDset = 250 mA, f = 960 MHz)

? Low intermodulation distortion : IM3 = -42 dBc TYP. (VDS = 28 V, IDset = 250 mA, f = 960, 961 MHz,

Pout = 36 dBm (2 tones) )

? Excellent thermal stability

? Low cost hollow plastic packages

? Integrated ESD protection

? Excellent stability against HCI

APPLICATIONS

? Digital cellular base station PA : GSM/D-AMPS/PDC/N-CDMA etc.

? UHF-band TV-transmitter PA