NE33284A中文資料瑞薩數(shù)據(jù)手冊PDF規(guī)格書
| 廠商型號 |
NE33284A |
| 功能描述 | L to X BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET |
| 文件大小 |
62.89 Kbytes |
| 頁面數(shù)量 |
10 頁 |
| 生產(chǎn)廠商 | NEC |
| 中文名稱 | 瑞薩 |
| 網(wǎng)址 | |
| 數(shù)據(jù)手冊 | |
| 更新時間 | 2025-8-25 16:02:00 |
| 人工找貨 | NE33284A價格和庫存，歡迎聯(lián)系客服免費(fèi)人工找貨 |
NE33284A規(guī)格書詳情
DESCRIPTION
The NE33284A is a Hetero-Junction FET that uses the junction between Si-doped AlGaAs and undoped InGaAs to create very high mobility electrons. The device features mushroom shaped TiAl gates for decreased gate resistance and improved power handling capabilities. The mushroom gate also results in lower noise figure and high associated gain. This device is housed in an epoxy-sealed, metal/ceramic package and is intended for high volume consumer and industrial applications.
FEATURES
? VERY LOW NOISE FIGURE: 0.8 dB typical at 12 GHz
? HIGH ASSOCIATED GAIN: 10.5 dB Typical at 12 GHz
? GATE LENGTH: 0.3 μm
? GATE WIDTH: 280 μm
? LOW COST METAL/CERAMIC PACKAGE
? TAPE & REEL PACKAGING OPTION AVAILABLE
產(chǎn)品屬性
- 型號：
NE33284A
- 制造商：
NEC
- 制造商全稱：
NEC
- 功能描述：
L to X BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
NEC |
25+23+ |
SMT86 |
6738 |
絕對原裝正品全新進(jìn)口深圳現(xiàn)貨 |
詢價 | ||
NEC |
6000 |
面議 |
19 |
DIP/SMD |
詢價 | ||
RENESAS/瑞薩 |
23+ |
26000 |
原廠授權(quán)一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種 |
詢價 | |||
NEC |
24+ |
SO86 |
200 |
詢價 | |||
NEC |
2023+ |
SMT86 |
3848 |
十五年行業(yè)誠信經(jīng)營,專注全新正品 |
詢價 | ||
NEC |
24+ |
SMT86 |
9600 |
原裝現(xiàn)貨,優(yōu)勢供應(yīng),支持實單! |
詢價 | ||
NEC |
23+ |
SMT86 |
15000 |
全新原裝現(xiàn)貨,價格優(yōu)勢 |
詢價 | ||
NEC |
22+ |
SMT |
3000 |
原裝正品,支持實單 |
詢價 | ||
NEC |
24+ |
SMT36 |
598000 |
原裝現(xiàn)貨假一賠十 |
詢價 | ||
NEC |
2450+ |
SMT |
6540 |
只做原裝正品現(xiàn)貨或訂貨!終端客戶免費(fèi)申請樣品! |
詢價 |
